Roberto Lacerda de Orio

According to our database, Roberto Lacerda de Orio authored at least 13 papers between 2010 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Back-Hopping in Ultra-Scaled MRAM Cells.

Mario Bendra, Simone Fiorentini, Johannes Ender, R. L. de Orio, T. Hadámek, Nils Petter Jørstad, Bernhard Pruckner, Siegfried Selberherr, Wolfgang Goes, Viktor Sverdlov

Proceedings of the 46th MIPRO ICT and Electronics Convention, 2023

2022

Spin Transfer Torques in Ultra-Scaled MRAM Cells.

Mario Bendra, Simone Fiorentini, Johannes Ender, R. L. de Orio, T. Hadámek, W. J. Loch, Nils Petter Jørstad, Siegfried Selberherr, Wolfgang Goes, Viktor Sverdlov

Proceedings of the 45th Jubilee International Convention on Information, 2022

Spin Torques in ULTRA-Scaled MRAM Devices.

Simone Fiorentini, Mario Bendra, Johannes Ender, Roberto Lacerda de Orio, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

Impact of Gold Interconnect Microstructure on Electromigration Failure Time Statistics.

Hajdin Ceric, Roberto Lacerda de Orio, Siegfried Selberherr

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

2021

Finite Element Method Approach to MRAM Modeling.

Mario Bendra, Johannes Ender, Simone Fiorentini, T. Hadámek, Roberto Lacerda de Orio, Wolfgang Goes, Viktor Sverdlov, Siegfried Selberherr

Proceedings of the 44th International Convention on Information, 2021

2019

Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM.

Roberto Lacerda de Orio, Alexander Makarov, Siegfried Selberherr, Wolfgang Goes, Johannes Ender, Simone Fiorentini, Viktor Sverdlov

Proceedings of the 49th European Solid-State Device Research Conference, 2019

2018

Operational Amplifier Performance Degradation and Time-to-Failure due to Electromigration.

Rafael O. Nunes, R. L. de Orio

Proceedings of the 31st Symposium on Integrated Circuits and Systems Design, 2018

2017

Study of the impact of electromigration on integrated circuit performance and reliability at design level.

Rafael O. Nunes, R. L. de Orio

Microelectron. Reliab., 2017

2012

Electromigration failure in a copper dual-damascene structure with a through silicon via.

Roberto Lacerda de Orio, Hajdin Ceric, Siegfried Selberherr

Microelectron. Reliab., 2012

Interconnect reliability dependence on fast diffusivity paths.

Hajdin Ceric, Roberto Lacerda de Orio, Siegfried Selberherr

Microelectron. Reliab., 2012

2011

An analytical approach for physical modeling of hot-carrier induced degradation.

Stanislav Tyaginov, Ivan A. Starkov, Hubert Enichlmair, C. Jungemann, Jong Mun Park, Ehrenfried Seebacher, R. L. de Orio, Hajdin Ceric, Tibor Grasser

Microelectron. Reliab., 2011

A compact model for early electromigration failures of copper dual-damascene interconnects.

R. L. de Orio, Hajdin Ceric, Siegfried Selberherr

Microelectron. Reliab., 2011

2010

Physically based models of electromigration: From Black's equation to modern TCAD models.

R. L. de Orio, Hajdin Ceric, Siegfried Selberherr

Microelectron. Reliab., 2010