Ivan A. Starkov

According to our database, Ivan A. Starkov authored at least 7 papers between 2009 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

The non-monotonicity of growth rate of viscous fingers in heterogeneous porous media.

Ivan A. Starkov, D. A. Pavlov, Sergey Tikhomirov, Fedor Bakharev

CoRR, 2023

2022

Velocity of viscous fingers in miscible displacement: Comparison with analytical models.

Fedor Bakharev, Alexsandr Enin, A. Groman, A. Kalyuzhnyuk, S. Matveenko, Yulia Petrova, Ivan A. Starkov, Sergey Tikhomirov

J. Comput. Appl. Math., 2022

2014

Investigation of the threshold voltage turn-around effect in long-channel n-MOSFETs due to hot-carrier stress.

Ivan A. Starkov, Alexander S. Starkov

Microelectron. Reliab., 2014

A Semi-numerical Approach to Radiation Boundary Conditions.

Ivan A. Starkov, Alexander S. Starkov

Proceedings of the Numerical Methods and Applications - 8th International Conference, 2014

2011

An analytical approach for physical modeling of hot-carrier induced degradation.

Stanislav Tyaginov, Ivan A. Starkov, Hubert Enichlmair, C. Jungemann, Jong Mun Park, Ehrenfried Seebacher, R. L. de Orio, Hajdin Ceric, Tibor Grasser

Microelectron. Reliab., 2011

2010

Interface traps density-of-states as a vital component for hot-carrier degradation modeling.

Stanislav Tyaginov, Ivan A. Starkov, Oliver Triebl, Johann Cervenka, C. Jungemann, Sara Carniello, Jong Mun Park, Hubert Enichlmair, Markus Karner, Ch. Kernstock, Ehrenfried Seebacher, Rainer Minixhofer, Hajdin Ceric, Tibor Grasser

Microelectron. Reliab., 2010

2009

Impact of O-Si-O bond angle fluctuations on the Si-O bond-breakage rate.

Stanislav Tyaginov, Viktor Sverdlov, Ivan A. Starkov, Wolfgang Gös, Tibor Grasser

Microelectron. Reliab., 2009