Stanislav Tyaginov

According to our database, Stanislav Tyaginov authored at least 23 papers between 2009 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs.

L. Panarella, Ben Kaczer, Quentin Smets, Devin Verreck, Tom Schram, Daire Cott, Dennis Lin, Stanislav Tyaginov, I. Asselberghs, Cesar J. Lockhart de la Rosa, Gouri Sankar Kar, Valeri Afanas'ev

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Reliability challenges in Forksheet Devices: (Invited Paper).

Erik Bury, Michiel Vandemaele, Jacopo Franco, Adrian Chasin, Stanislav Tyaginov, A. Vandooren, Romain Ritzenthaler, Hans Mertens, Javier Diaz-Fortuny, N. Horiguchi, Dimitri Linten, Ben Kaczer

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs.

Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Erik Bury, Adrian Vaisman Chasin, Jacopo Franco, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors.

Stanislav Tyaginov, Alexander Makarov, Al-Moatasem Bellah El-Sayed, Adrian Vaisman Chasin, Erik Bury, Markus Jech, Michiel Vandemaele, Alexander Grill, An De Keersgieter, Mikhail I. Vexler, Geert Eneman, Ben Kaczer

Proceedings of the IEEE International Reliability Physics Symposium, 2022

On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors.

Stanislav Tyaginov, Aryan Afzalian, Alexander Makarov, Alexander Grill, Michiel Vandemaele, Maksim Cherenev, Mikhail I. Vexler, Geert Hellings, Ben Kaczer

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors.

Alexander Grill, V. John, Jakob Michl, A. Beckers, Erik Bury, Stanislav Tyaginov, Bertrand Parvais, Adrian Vaisman Chasin, Tibor Grasser, Michael Waltl, Ben Kaczer, Bogdan Govoreanu

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets.

Erik Bury, Adrian Vaisman Chasin, Ben Kaczer, Michiel Vandemaele, Stanislav Tyaginov, Jacopo Franco, Romain Ritzenthaler, Hans Mertens, Pieter Weckx, N. Horiguchi, Dimitri Linten

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery.

J. P. Bastos, Barry J. O'Sullivan, Jacopo Franco, Stanislav Tyaginov, Brecht Truijen, Adrian Vaisman Chasin, Robin Degraeve, Ben Kaczer, Romain Ritzenthaler, Elena Capogreco, E. Dentoni Litta, Alessio Spessot, Yusuke Higashi, Y. Yoon, V. Machkaoutsan, Pierre Fazan, N. Horiguchi

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

A BSIM-Based Predictive Hot-Carrier Aging Compact Model.

Yang Xiang, Stanislav Tyaginov, Michiel Vandemaele, Zhicheng Wu, Jacopo Franco, Erik Bury, Brecht Truijen, Bertrand Parvais, Dimitri Linten, Ben Kaczer

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Physics-based device aging modelling framework for accurate circuit reliability assessment.

Zhicheng Wu, Jacopo Franco, Brecht Truijen, Philippe Roussel, Stanislav Tyaginov, Michiel Vandemaele, Erik Bury, Guido Groeseneken, Dimitri Linten, Ben Kaczer

Proceedings of the IEEE International Reliability Physics Symposium, 2021

The properties, effect and extraction of localized defect profiles from degraded FET characteristics.

Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Jacopo Franco, Robin Degraeve, Adrian Vaisman Chasin, Zhicheng Wu, Erik Bury, Yang Xiang, Hans Mertens, Guido Groeseneken

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation.

Michiel Vandemaele, Kai-Hsin Chuang, Erik Bury, Stanislav Tyaginov, Guido Groeseneken, Ben Kaczer

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

A Compact Physics Analytical Model for Hot-Carrier Degradation.

Stanislav Tyaginov, Alexander Grill, Michiel Vandemaele, Tibor Grasser, Geert Hellings, Alexander Makarov, Markus Jech, Dimitri Linten, Ben Kaczer

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures.

Alexander Grill, Erik Bury, Jakob Michl, Stanislav Tyaginov, Dimitri Linten, Tibor Grasser, Bertrand Parvais, Ben Kaczer, Michael Waltl, Iuliana P. Radu

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Full (V_g, V_d) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs.

Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Zlatan Stanojevic, Alexander Makarov, Adrian Vaisman Chasin, Erik Bury, Hans Mertens, Dimitri Linten, Guido Groeseneken

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs.

Alexander Makarov, Ben Kaczer, Philippe Roussel, Adrian Vaisman Chasin, Alexander Grill, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Tibor Grasser, Dimitri Linten, Stanislav Tyaginov

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants.

Alexander Makarov, Dimitri Linten, Stanislav Tyaginov, Ben Kaczer, Philippe Roussel, Adrian Vaisman Chasin, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Markus Jech, Tibor Grasser

Proceedings of the 49th European Solid-State Device Research Conference, 2019

2016

A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs.

Prateek Sharma, Stanislav Tyaginov, Stewart E. Rauch, Jacopo Franco, Ben Kaczer, Alexander Makarov, Mikhail I. Vexler, Tibor Grasser

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2015

Comparison of analytic distribution function models for hot-carrier degradation modeling in nLDMOSFETs.

Prateek Sharma, Stanislav Tyaginov, Yannick Wimmer, Florian Rudolf, Karl Rupp, Hubert Enichlmair, J. H. Park, Hajdin Ceric, Tibor Grasser

Microelectron. Reliab., 2015

Origins and implications of increased channel hot carrier variability in nFinFETs.

Ben Kaczer, Jacopo Franco, M. Cho, Tibor Grasser, Philippe J. Roussel, Stanislav Tyaginov, M. Bina, Yannick Wimmer, Luis-Miguel Procel, Lionel Trojman, Felice Crupi, Gregory Pitner, Vamsi Putcha, Pieter Weckx, Erik Bury, Z. Ji, An De Keersgieter, Thomas Chiarella, Naoto Horiguchi, Guido Groeseneken, Aaron Thean

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2011

An analytical approach for physical modeling of hot-carrier induced degradation.

Stanislav Tyaginov, Ivan A. Starkov, Hubert Enichlmair, C. Jungemann, Jong Mun Park, Ehrenfried Seebacher, R. L. de Orio, Hajdin Ceric, Tibor Grasser

Microelectron. Reliab., 2011

2010

Interface traps density-of-states as a vital component for hot-carrier degradation modeling.

Stanislav Tyaginov, Ivan A. Starkov, Oliver Triebl, Johann Cervenka, C. Jungemann, Sara Carniello, Jong Mun Park, Hubert Enichlmair, Markus Karner, Ch. Kernstock, Ehrenfried Seebacher, Rainer Minixhofer, Hajdin Ceric, Tibor Grasser

Microelectron. Reliab., 2010

2009

Impact of O-Si-O bond angle fluctuations on the Si-O bond-breakage rate.

Stanislav Tyaginov, Viktor Sverdlov, Ivan A. Starkov, Wolfgang Gös, Tibor Grasser

Microelectron. Reliab., 2009