Barry P. Linder

According to our database, Barry P. Linder authored at least 15 papers between 2002 and 2022.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2022

A Flexible and Inherently Self-Consistent Methodology for MOL/BEOL/MIMCAP TDDB Applications with Excessive Variability-Induced Degradation.

Ernest Y. Wu, Ron Bolam, Baozhen Li, Tian Shen, Barry P. Linder, Griselda Bonilla, Miaomiao Wang, Dechao Guo

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2019

Long Term NBTI Relaxation Under AC and DC Biased Stress and Recovery.

Elnatan Mataev, James H. Stathis, Giuseppe La Rosa, Barry P. Linder

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Transformation of Ramped Current Stress VBDto Constant Voltage Stress TDDB TBD.

Andrew Kim, Ernest Y. Wu, Baozhen Li, Barry P. Linder

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Estimating transistor channel temperature using time-resolved and time-integrated NIR emission.

Franco Stellari, Alan J. Weger, Keith A. Jenkins, Giuseppe La Rosa, Barry P. Linder, Peilin Song

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Electromigration characteristics of power grid like structures.

Baozhen Li, Andrew Kim, Paul McLaughlin, Barry P. Linder, Cathryn Christiansen

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Transient self-heating modeling and simulations of back-end-of-line interconnects.

Andrew Kim, Baozhen Li, Barry P. Linder

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2015

A critical analysis of sampling-based reconstruction methodology for dielectric breakdown systems (BEOL/MOL/FEOL).

Ernest Y. Wu, James H. Stathis, Baozhen Li, Barry P. Linder, Kai Zhao, Griselda Bonilla

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Self-heating characterization of FinFET SOI devices using 2D time resolved emission measurements.

Franco Stellari, Keith A. Jenkins, Alan J. Weger, Barry P. Linder, Peilin Song

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Analyzing path delays for accelerated testing of logic chips.

Emily Ray, Barry P. Linder, Raphael Robertazzi, Kevin Stawiasz, Alan J. Weger, Emmanuel Yashchin, James H. Stathis, Peilin Song

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2013

Improving and optimizing reliability in future technologies with high-κ dielectrics.

Barry P. Linder, Eduard Cartier, S. Krishnan, Ernest Y. Wu

Proceedings of the 2013 International Symposium on VLSI Design, Automation, and Test, 2013

2003

Circuit implications of gate oxide breakdown.

James H. Stathis, Rosana Rodríguez, Barry P. Linder

Microelectron. Reliab., 2003

Reliability of ultra-thin oxides in CMOS circuits.

James H. Stathis, Barry P. Linder, Rosana Rodríguez, Salvatore Lombardo

Microelectron. Reliab., 2003

Influence and model of gate oxide breakdown on CMOS inverters.

Rosana Rodríguez, James H. Stathis, Barry P. Linder, Rajiv V. Joshi, Ching-Te Chuang

Microelectron. Reliab., 2003

2002

Analysis of the effect of the gate oxide breakdown on SRAM stability.

Rosana Rodríguez, James H. Stathis, Barry P. Linder, Steven P. Kowalczyk, Ching-Te Chuang, Rajiv V. Joshi, Gregory A. Northrop, Kerry Bernstein, Azeez J. Bhavnagarwala, Salvatore Lombardo

Microelectron. Reliab., 2002

Dependence of Post-Breakdown Conduction on Gate Oxide Thickness.

Salvatore Lombardo, James H. Stathis, Barry P. Linder

Microelectron. Reliab., 2002