S. Bruyère

According to our database, S. Bruyère authored at least 10 papers between 2001 and 2005.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2005

Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown.

G. Ribes, S. Bruyère, M. Denais, David Roy, Gérard Ghibaudo

Microelectron. Reliab., 2005

Multi-vibrational hydrogen release: Physical origin of T_bd, Q_bd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides.

G. Ribes, S. Bruyère, M. Denais, Frederic Monsieur, Vincent Huard, David Roy, Gérard Ghibaudo

Microelectron. Reliab., 2005

2003

New insights into the change of voltage acceleration and temperature activation of oxide breakdown.

G. Ribes, S. Bruyère, Frederic Monsieur, David Roy, Vincent Huard

Microelectron. Reliab., 2003

On the role of holes in oxide breakdown mechanism in inverted nMOSFETs.

Frederic Monsieur, E. Vincent, Vincent Huard, S. Bruyère, David Roy, Thomas Skotnicki, G. Pananakakis, Gérard Ghibaudo

Microelectron. Reliab., 2003

MIM capacitance variation under electrical stress.

C. Besset, S. Bruyère, S. Blonkowski, S. Crémer, E. Vincent

Microelectron. Reliab., 2003

2002

Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement.

David Roy, S. Bruyère, E. Vincent, Frederic Monsieur

Microelectron. Reliab., 2002

Gate oxide Reliability assessment optimization.

Frederic Monsieur, E. Vincent, David Roy, S. Bruyère, G. Pananakakis, Gérard Ghibaudo

Microelectron. Reliab., 2002

2001

Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions.

Frederic Monsieur, E. Vincent, David Roy, S. Bruyère, G. Pananakakis, Gérard Ghibaudo

Microelectron. Reliab., 2001

Body effect induced wear-out acceleration in ultra-thin oxides.

S. Bruyère, David Roy, E. Robilliart, E. Vincent, Gérard Ghibaudo

Microelectron. Reliab., 2001

Failures in ultrathin oxides: Stored energy or carrier energy driven?

S. Bruyère, Frederic Monsieur, David Roy, E. Vincent, Gérard Ghibaudo

Microelectron. Reliab., 2001