G. Pananakakis

According to our database, G. Pananakakis authored at least 6 papers between 2001 and 2012.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2012

Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption.

Quentin Hubert, Carine Jahan, Alain Toffoli, Gabriele Navarro, S. Chandrashekar, Pierre Noe, Veronique Sousa, Luca Perniola, J.-F. Nodin, A. Persico, S. Maitrejean, A. Roule, E. Henaff, M. Tessaire, P. Zuliani, Roberto Annunziata, Gilles Reimbold, G. Pananakakis, Barbara De Salvo

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2003

On the role of holes in oxide breakdown mechanism in inverted nMOSFETs.

Frederic Monsieur, E. Vincent, Vincent Huard, S. Bruyère, David Roy, Thomas Skotnicki, G. Pananakakis, Gérard Ghibaudo

Microelectron. Reliab., 2003

2002

Gate oxide Reliability assessment optimization.

Frederic Monsieur, E. Vincent, David Roy, S. Bruyère, G. Pananakakis, Gérard Ghibaudo

Microelectron. Reliab., 2002

2001

Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions.

Frederic Monsieur, E. Vincent, David Roy, S. Bruyère, G. Pananakakis, Gérard Ghibaudo

Microelectron. Reliab., 2001

Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides.

Frederic Monsieur, E. Vincent, G. Pananakakis, Gérard Ghibaudo

Microelectron. Reliab., 2001

Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4-3 nm).

Raphael Clerc, Alessandro S. Spinelli, Gérard Ghibaudo, Charles Leroux, G. Pananakakis

Microelectron. Reliab., 2001