Vincent Huard

According to our database, Vincent Huard authored at least 48 papers between 2003 and 2023.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2023

A 12.4TOPS/W @ 136GOPS AI-IoT System-on-Chip with 16 RISC-V, 2-to-8b Precision-Scalable DNN Acceleration and 30%-Boost Adaptive Body Biasing.

Francesco Conti, Davide Rossi, Gianna Paulin, Angelo Garofalo, Alfio Di Mauro, Georg Rutishauser, Gianmarco Ottavi, Manuel Eggimann, Hayate Okuhara, Vincent Huard, Olivier Montfort, Lionel Jure, Nils Exibard, Pascal Gouedo, Mathieu Louvat, Emmanuel Botte, Luca Benini

Proceedings of the IEEE International Solid- State Circuits Conference, 2023

Radiation Hardness Evaluations of a Stacked Flip Flop in a 22 nm FD-SOI Process by Heavy-Ion Irradiation.

Shotaro Sugitani, Ryuichi Nakajima, Takafumi Ito, Jun Furuta, Kazutoshi Kobayashi, Mathieu Louvat, Francois Jacquet, Jean-Christophe Eloy, Olivier Montfort, Lionel Jure, Vincent Huard

Proceedings of the 29th International Symposium on On-Line Testing and Robust System Design, 2023

Embracing the new era of AI at the edge.

Vincent Huard

Proceedings of the International Conference on IC Design and Technology, 2023

2022

Correlation Technologies for OTA Testing of mmWave Mobile Devices Using Energy Metrics.

Sidina Wane, T. V. Dinh, Q. H. Tran, Damienne Bajon, F. Ferrero, Lionel Duvillaret, Gwenaël Gaborit, Jacques Sombrin, E. de Lédinghen, P. Laban, Vincent Huard, Souhir Mhira, L. Tombakdjian, Philippe Ratajczak, A. Bousseksou

Proceedings of the 2022 IEEE Radio and Wireless Symposium, 2022

Runtime Test Solution for Adaptive Aging Compensation and Fail Operational Safety mode.

Vincent Huard, Francois Jacquet, Souhir Mhira, Lionel Jure, Olivier Montfort, Mathieu Louvat, L. Zaia, F. Bertrand, E. Acacia, O. Caffin, H. Belhadj, O. Durand, Nils Exibard, Vincent Bonnet, A. Charvier, Paolo Bernardi, Riccardo Cantoro

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

A 0.021mm² PVT-Aware Digital-Flow-Compatible Adaptive Back-Biasing Regulator with Scalable Drivers Achieving 450% Frequency Boosting and 30% Power Reduction in 22nm FDSOI Technology.

Yasser Moursy, Thiago Raupp da Rosa, Lionel Jure, Anthony Quelen, Sébastien Genevey, Lionel Pierrefeu, Emmanuel G. Collins Jr., Joerg Winkler, Jonathan Park, Gaël Pillonnet, Vincent Huard, Andrea Bonzo, Philippe Flatresse

Proceedings of the IEEE International Solid-State Circuits Conference, 2021

Industrial best practice: cases of study by automotive chip- makers.

L. Degli Abbati, Rudolf Ullmann, G. Paganini, M. Coppetta, L. Zaia, Vincent Huard, O. Montfort, Riccardo Cantoro, Giorgio Insinga, F. Venini, P. Calao, Paolo Bernardi

Proceedings of the 36th IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, 2021

2018

Investigation of speed sensors accuracy for process and aging compensation.

Riddhi Jitendrakumar Shah, Florian Cacho, Vincent Huard, Souhir Mhira, D. Arora, Pankaj Agarwal, Shubham Kumar, S. Balaraman, Bijoy Kumar Singh, Lorena Anghel

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Resilient automotive products through process, temperature and aging compensation schemes.

Souhir Mhira, Vincent Huard, D. Arora, Philippe Flatresse, Alain Bravaix

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Key parameters driving transistor degradation in advanced strained SiGe channels.

Vincent Huard, Cheikh Ndiaye, M. Arabi, Narendra Parihar, X. Federspiel, Souhir Mhira, S. Mahapatra, Alain Bravaix

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Managing electrical reliability in consumer systems for improved energy efficiency.

Vincent Huard, Souhir Mhira, A. Barclais, X. Lecocq, F. Raugi, M. Cantournet, Alain Bravaix

Proceedings of the IEEE International Reliability Physics Symposium, 2018

A new method for quickly evaluating reversible and permanent components of the BTI degradation.

Xavier Garros, Alexandre Subirats, Gilles Reimbold, Fred Gaillard, Cheikh Diouf, X. Federspiel, Vincent Huard, M. Rafik

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Modeling self-heating effects in advanced CMOS nodes.

M. Arabi, A. Cros, X. Federspiel, Cheikh Ndiaye, Vincent Huard, M. Rafik

Proceedings of the IEEE International Reliability Physics Symposium, 2018

NBTI aged cell rejuvenation with back biasing and resulting critical path reordering for digital circuits in 28nm FDSOI.

Ajith Sivadasan, Riddhi Jitendrakumar Shah, Vincent Huard, Florian Cacho, Lorena Anghel

Proceedings of the 2018 Design, Automation & Test in Europe Conference & Exhibition, 2018

2017

Characterization of Low Drop-Out during ageing and design for yield.

R. Lajmi, Florian Cacho, Estelle Lauga-Larroze, Sylvain Bourdel, Ph. Benech, Vincent Huard, X. Federspiel

Microelectron. Reliab., 2017

Enabling robust automotive electronic components in advanced CMOS nodes.

Vincent Huard, Souhir Mhira, Florian Cacho, Alain Bravaix

Microelectron. Reliab., 2017

Cognitive approach to support dynamic aging compensation.

Souhir Mhira, Vincent Huard, Ahmed Benhassain, Florian Cacho, David Meyer, Sylvie Naudet, Abhishek Jain, C. R. Parthasarathy, Alain Bravaix

Proceedings of the IEEE International Test Conference, 2017

Dynamic aging compensation and Safety measures in Automotive environment.

Souhir Mhira, Vincent Huard, Ahmed Benhassain, Florian Cacho, Sylvie Naudet, Abhishek Jain, C. R. Parthasarathy, Alain Bravaix

Proceedings of the 23rd IEEE International Symposium on On-Line Testing and Robust System Design, 2017

Investigation of critical path selection for in-situ monitors insertion.

Florian Cacho, Ahmed Benhassain, Riddhi Jitendrakumar Shah, Souhir Mhira, Vincent Huard, Lorena Anghel

Proceedings of the 23rd IEEE International Symposium on On-Line Testing and Robust System Design, 2017

Workload dependent reliability timing analysis flow.

Ajith Sivadasan, Armelle Notin, Vincent Huard, Etienne Maurin, Souhir Mhira, Florian Cacho, Lorena Anghel

Proceedings of the Design, Automation & Test in Europe Conference & Exhibition, 2017

2016

Performance vs. reliability adaptive body bias scheme in 28 nm & 14 nm UTBB FDSOI nodes.

Cheikh Ndiaye, Vincent Huard, X. Federspiel, Florian Cacho, Alain Bravaix

Microelectron. Reliab., 2016

Potentiality of healing techniques in hot-carrier damaged 28 nm FDSOI CMOS nodes.

Alain Bravaix, Florian Cacho, X. Federspiel, Cheikh Ndiaye, Souhir Mhira, Vincent Huard

Microelectron. Reliab., 2016

Early system failure prediction by using aging in situ monitors: Methodology of implementation and application results.

Lorena Anghel, Ahmed Benhassain, Ajith Sivadasan, Florian Cacho, Vincent Huard

Proceedings of the 34th IEEE VLSI Test Symposium, 2016

28nm FDSOI technology sub-0.6V SRAM Vmin assessment for ultra low voltage applications.

Rossella Ranica, Nicolas Planes, Vincent Huard, Olivier Weber, Daniel Noblet, Damien Croain, Fabien Giner, Sylvie Naudet, P. Mergault, S. Ibars, A. Villaret, Maryline Parra, Sébastien Haendler, M. Quoirin, Florian Cacho, C. Julien, F. Terrier, Lorenzo Ciampolini, David Turgis, Christophe Lecocq, Franck Arnaud

Proceedings of the 2016 IEEE Symposium on VLSI Circuits, 2016

In-situ slack monitors: taking up the challenge of on-die monitoring of variability and reliability.

Ahmed Benhassain, Souhir Mhira, Florian Cacho, Vincent Huard, Lorena Anghel

Proceedings of the 1st IEEE International Verification and Security Workshop, 2016

Activity profiling: Review of different solutions to develop reliable and performant design.

Florian Cacho, Ahmed Benhassain, Souhir Mhira, Ajith Sivadasan, Vincent Huard, P. Cathelin, Vincent Knopik, Abhishek Jain, C. R. Parthasarathy, Lorena Anghel

Proceedings of the 22nd IEEE International Symposium on On-Line Testing and Robust System Design, 2016

Hot-carrier and BTI damage distinction for high performance digital application in 28nm FDSOI and 28nm LP CMOS nodes.

Alain Bravaix, M. Saliva, Florian Cacho, X. Federspiel, Cheikh Ndiaye, Souhir Mhira, Edith Kussener, E. Pauly, Vincent Huard

Proceedings of the 22nd IEEE International Symposium on On-Line Testing and Robust System Design, 2016

Workload Impact on BTI HCI Induced Aging of Digital Circuits: A System level Analysis.

Ajith Sivadasan, Florian Cacho, Sidi Ahmed Benhassain, Vincent Huard, Lorena Anghel

Proceedings of the Workshop on Early Reliability Modeling for Aging and Variability in Silicon Systems, 2016

Study of workload impact on BTI HCI induced aging of digital circuits.

Ajith Sivadasan, Florian Cacho, Sidi Ahmed Benhassain, Vincent Huard, Lorena Anghel

Proceedings of the 2016 Design, Automation & Test in Europe Conference & Exhibition, 2016

Early failure prediction by using in-situ monitors: Implementation and application results.

Ahmed Benhassain, Florian Cacho, Vincent Huard, Lorena Anghel

Proceedings of the Workshop on Early Reliability Modeling for Aging and Variability in Silicon Systems, 2016

2015

Impact of gate oxide breakdown in logic gates from 28nm FDSOI CMOS technology.

M. Saliva, Florian Cacho, Cheikh Ndiaye, Vincent Huard, D. Angot, Alain Bravaix, Lorena Anghel

Proceedings of the IEEE International Reliability Physics Symposium, 2015

28nm UTBB FDSOI product reliability/performance trade-off optimization through body bias operation.

P. Mora, X. Federspiel, Florian Cacho, Vincent Huard, Wafa Arfaoui

Proceedings of the IEEE International Reliability Physics Symposium, 2015

From BTI variability to product failure rate: A technology scaling perspective.

Vincent Huard, D. Angot, Florian Cacho

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Workload-dependent BTI analysis in a processor core at high level.

Olivier Héron, Chiara Sandionigi, E. Piriou, Safa Mbarek, Vincent Huard

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment.

A. Bezza, M. Rafik, David Roy, X. Federspiel, P. Mora, Cheikh Diouf, Vincent Huard, Gérard Ghibaudo

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Digital circuits reliability with in-situ monitors in 28nm fully depleted SOI.

M. Saliva, Florian Cacho, Vincent Huard, X. Federspiel, D. Angot, Ahmed Benhassain, Alain Bravaix, Lorena Anghel

Proceedings of the 2015 Design, Automation & Test in Europe Conference & Exhibition, 2015

Timing in-situ monitors: Implementation strategy and applications results.

Ahmed Benhassain, Florian Cacho, Vincent Huard, M. Saliva, Lorena Anghel, C. R. Parthasarathy, Abhishek Jain, Fabien Giner

Proceedings of the 2015 IEEE Custom Integrated Circuits Conference, 2015

2012

Microscopic scale characterization and modeling of transistor degradation under HC stress.

Yoann Mamy Randriamihaja, Vincent Huard, Xavier Federspiel, Alban Zaka, Pierpaolo Palestri, Denis Rideau, David Roy, Alain Bravaix

Microelectron. Reliab., 2012

2011

A bottom-up approach for System-On-Chip reliability.

Vincent Huard, N. Ruiz Amador, Florian Cacho, E. Pion

Microelectron. Reliab., 2011

Bottom-up digital system-level reliability modeling.

N. Ruiz Amador, Vincent Huard, E. Pion, Florian Cacho, Damien Croain, V. Robert, Sylvain Engels, Philippe Flatresse, Lorena Anghel

Proceedings of the 2011 IEEE Custom Integrated Circuits Conference, 2011

2007

Design-In Reliability for 90-65nm CMOS Nodes Submitted to Hot-Carriers and NBTI Degradation.

C. R. Parthasarathy, Alain Bravaix, Chloe Guérin, M. Denais, Vincent Huard

Proceedings of the Integrated Circuit and System Design. Power and Timing Modeling, 2007

2006

Designing in reliability in advanced CMOS technologies.

C. R. Parthasarathy, M. Denais, Vincent Huard, G. Ribes, David Roy, Chloe Guérin, F. Perrier, E. Vincent, Alain Bravaix

Microelectron. Reliab., 2006

NBTI degradation: From physical mechanisms to modelling.

Vincent Huard, M. Denais, C. R. Parthasarathy

Microelectron. Reliab., 2006

2005

Multi-vibrational hydrogen release: Physical origin of T_bd, Q_bd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides.

G. Ribes, S. Bruyère, M. Denais, Frederic Monsieur, Vincent Huard, David Roy, Gérard Ghibaudo

Microelectron. Reliab., 2005

A thorough investigation of MOSFETs NBTI degradation.

Vincent Huard, M. Denais, F. Perrier, Nathalie Revil, C. R. Parthasarathy, Alain Bravaix, E. Vincent

Microelectron. Reliab., 2005

Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs.

Alain Bravaix, Didier Goguenheim, M. Denais, Vincent Huard, C. R. Parthasarathy, F. Perrier, Nathalie Revil, E. Vincent

Microelectron. Reliab., 2005

2003

New insights into the change of voltage acceleration and temperature activation of oxide breakdown.

G. Ribes, S. Bruyère, Frederic Monsieur, David Roy, Vincent Huard

Microelectron. Reliab., 2003

On the role of holes in oxide breakdown mechanism in inverted nMOSFETs.

Frederic Monsieur, E. Vincent, Vincent Huard, S. Bruyère, David Roy, Thomas Skotnicki, G. Pananakakis, Gérard Ghibaudo

Microelectron. Reliab., 2003