M. Denais

According to our database, M. Denais authored at least 7 papers between 2005 and 2007.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2007

Design-In Reliability for 90-65nm CMOS Nodes Submitted to Hot-Carriers and NBTI Degradation.

C. R. Parthasarathy, Alain Bravaix, Chloe Guérin, M. Denais, Vincent Huard

Proceedings of the Integrated Circuit and System Design. Power and Timing Modeling, 2007

2006

Designing in reliability in advanced CMOS technologies.

C. R. Parthasarathy, M. Denais, Vincent Huard, G. Ribes, David Roy, Chloe Guérin, F. Perrier, E. Vincent, Alain Bravaix

Microelectron. Reliab., 2006

NBTI degradation: From physical mechanisms to modelling.

Vincent Huard, M. Denais, C. R. Parthasarathy

Microelectron. Reliab., 2006

2005

Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown.

G. Ribes, S. Bruyère, M. Denais, David Roy, Gérard Ghibaudo

Microelectron. Reliab., 2005

Multi-vibrational hydrogen release: Physical origin of T_bd, Q_bd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides.

G. Ribes, S. Bruyère, M. Denais, Frederic Monsieur, Vincent Huard, David Roy, Gérard Ghibaudo

Microelectron. Reliab., 2005

A thorough investigation of MOSFETs NBTI degradation.

Vincent Huard, M. Denais, F. Perrier, Nathalie Revil, C. R. Parthasarathy, Alain Bravaix, E. Vincent

Microelectron. Reliab., 2005

Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs.

Alain Bravaix, Didier Goguenheim, M. Denais, Vincent Huard, C. R. Parthasarathy, F. Perrier, Nathalie Revil, E. Vincent

Microelectron. Reliab., 2005