Sekeon Kim

According to our database, Sekeon Kim authored at least 6 papers between 2021 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

Ferroelectric FET Nonvolatile Sense-Amplifier-Based Flip-Flops for Low Voltage Operation.

Sekeon Kim, Sehee Lim, Dong Han Ko, Tae Woo Oh, Seong-Ook Jung

IEEE Trans. Circuits Syst. I Regul. Pap., January, 2024

15.4 Self-Enabled Write-Assist Cells for High-Density SRAM in a Resistance-Dominated Technology Node.

Minjune Yeo, Keonhee Cho, Giseok Kim, Won Joon Jo, Jisang Oh, Sekeon Kim, Kyeongrim Baek, Sungho Park, Seung Jae Yei, Seong-Ook Jung

Proceedings of the IEEE International Solid-State Circuits Conference, 2024

2023

Cross-Coupled Ferroelectric FET-Based Ternary Content Addressable Memory With Energy-Efficient Match Line Scheme.

Sehee Lim, Dong Han Ko, Se Keon Kim, Seong-Ook Jung

IEEE Trans. Circuits Syst. I Regul. Pap., February, 2023

A Static Contention-Free Dual-Edge-Triggered Flip-Flop with Redundant Internal Node Transition Elimination for Ultra-Low-Power Applications.

Sekeon Kim, Keonhee Cho, Kyeongrim Baek, Hyunjun Kim, Younmee Bae, Mijung Kim, Dongwook Seo, Sangyeop Baeck, Sungjae Lee, Seong-Ook Jung

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2021

Comparative Analysis and Energy-Efficient Write Scheme of Ferroelectric FET-Based Memory Cells.

Dong Han Ko, Tae Woo Oh, Sehee Lim, Se Keon Kim, Seong-Ook Jung

IEEE Access, 2021

High-Performance and Area-Efficient Ferroelectric FET-Based Nonvolatile Flip-Flops.

Se Keon Kim, Tae Woo Oh, Sehee Lim, Dong Han Ko, Seong-Ook Jung

IEEE Access, 2021