Sekeon Kim
Orcid: 0000-0001-5927-9390
According to our database1,
Sekeon Kim authored at least 9 papers
between 2021 and 2026.
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Bibliography
2026
A High-Density Low-Leakage and Low-Power Fully Voltage-Stacked SRAM for IoT Application.
IEEE J. Solid State Circuits, March, 2026
A 14 nm SRAM Using NMOS Header Assist Cell for Improved Write Ability and Reduced Cell Retention Leakage With Minimal Power Overhead.
IEEE J. Solid State Circuits, February, 2026
2024
Ferroelectric FET Nonvolatile Sense-Amplifier-Based Flip-Flops for Low Voltage Operation.
IEEE Trans. Circuits Syst. I Regul. Pap., January, 2024
Design of Physically Unclonable Function Using Ferroelectric FET With Auto Write-Back Technique for Resource-Limited IoT Security.
IEEE Internet Things J., 2024
15.4 Self-Enabled Write-Assist Cells for High-Density SRAM in a Resistance-Dominated Technology Node.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024
2023
Cross-Coupled Ferroelectric FET-Based Ternary Content Addressable Memory With Energy-Efficient Match Line Scheme.
IEEE Trans. Circuits Syst. I Regul. Pap., February, 2023
A Static Contention-Free Dual-Edge-Triggered Flip-Flop with Redundant Internal Node Transition Elimination for Ultra-Low-Power Applications.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
2021
Comparative Analysis and Energy-Efficient Write Scheme of Ferroelectric FET-Based Memory Cells.
IEEE Access, 2021
IEEE Access, 2021