Shingo Tomohisa

According to our database, Shingo Tomohisa authored at least 2 papers in 2018.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2018

Effect of lanthanum silicate interface layer on the electrical characteristics of 4H-SiC metal-oxide-semiconductor capacitors.

Yiming Lei, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Masayuki Furuhashi, Shingo Tomohisa, Satoshi Yamakawa, Kuniyuki Kakushima

Microelectron. Reliab., 2018

Improvement of SiO₂/4H-SiC Interface properties by post-metallization annealing.

Yiming Lei, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Masayuki Furuhashi, Shingo Tomohisa, Satoshi Yamakawa, Kuniyuki Kakushima

Microelectron. Reliab., 2018