Hitoshi Wakabayashi

According to our database, Hitoshi Wakabayashi authored at least 16 papers between 1997 and 2022.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2022

A Novel Method for Lightning Prediction by Direct Electric Field Measurements at the Ground Using Recurrent Neural Network.

Masamoto Fukawa, Xiaoqi Deng, Shinya Imai, Taiga Horiguchi, Ryo Ono, Ikumi Rachi, Sihan A, Kazuma Shinomura, Shunsuke Niwa, Takeshi Kudo, Hiroyuki Ito, Hitoshi Wakabayashi, Yoshihiro Miyake, Atsushi Hori

IEICE Trans. Inf. Syst., September, 2022

2019

Switching of 3300V Scaled IGBT by 5V Gate Drive.

Toshiro Hiramoto, Katsumi Satoh, Tomoko Matsudai, Wataru Saito, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Shinichi Nishizawa, Ichiro Omura, Hiromichi Ohashi, Kazuo Itou, Toshihiro Takakura, Munetoshi Fukui, Shinichi Suzuki, Ken Takeuchi, Masanori Tsukuda, Yohichiroh Numasawa

Proceedings of the 13th IEEE International Conference on ASIC, 2019

2018

Effect of lanthanum silicate interface layer on the electrical characteristics of 4H-SiC metal-oxide-semiconductor capacitors.

Yiming Lei, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Masayuki Furuhashi, Shingo Tomohisa, Satoshi Yamakawa, Kuniyuki Kakushima

Microelectron. Reliab., 2018

Improvement of SiO₂/4H-SiC Interface properties by post-metallization annealing.

Yiming Lei, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Masayuki Furuhashi, Shingo Tomohisa, Satoshi Yamakawa, Kuniyuki Kakushima

Microelectron. Reliab., 2018

New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment.

Kuniyuki Kakushima, Takuya Hoshii, M. Watanabe, N. Shizyo, K. Furukawa, Takuya Saraya, T. Takakura, K. Itou, M. Fukui, S. Suzuki, Ken Takeuchi, Iriya Muneta, Hitoshi Wakabayashi, Y. Numasawa, Atsushi Ogura, Shinichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, H. Ohashi, Hiroshi Iwai

Proceedings of the 2018 IEEE Symposium on VLSI Circuits, 2018

Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately.

Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Masahiro Watanabe, Naoyuki Shigvo, Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Iriya Muneta, Hitoshi Wakabayashi, Shinichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Lwai

Proceedings of the 48th European Solid-State Device Research Conference, 2018

2017

3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat).

Kazuo Tsutsui, Kuniyuki Kakushima, Takuya Hoshii, A. Nakajima, Shinichi Nishizawa, Hitoshi Wakabayashi, Iriya Muneta, K. Sato, Tomoko Matsudai, Wataru Saito, Takuya Saraya, K. Itou, M. Fukui, S. Suzuki, Masaharu Kobayashi, T. Takakura, Toshiro Hiramoto, Atsushi Ogura, Y. Numasawa, Ichiro Omura, H. Ohashi, Hiroshi Iwai

Proceedings of the 12th IEEE International Conference on ASIC, 2017

2016

Resistive switching properties of a thin SiO₂ layer with CeO_x buffer layer on n⁺ and p⁺ Si bottom electrodes.

M. S. Hadi, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Kuniyuki Kakushima

Microelectron. Reliab., 2016

Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current.

J. Chen, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Kuniyuki Kakushima

Microelectron. Reliab., 2016

La₂O₃ gate dielectrics for AlGaN/GaN HEMT.

J. Chen, Takamasa Kawanago, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, D. Nohata, Hiroshi Nohira, Kuniyuki Kakushima

Microelectron. Reliab., 2016

2015

Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity.

Wei Li, Akito Sasaki, Hideyuki Oozu, Katsuaki Aoki, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai

Microelectron. Reliab., 2015

Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes.

Wei Li, Akito Sasaki, Hideyuki Oozu, Katsuaki Aoki, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai

Microelectron. Reliab., 2015

2014

A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability.

Yan Wu, Hiroyuki Hasegawa, Kuniyuki Kakushima, Kenji Ohmori, Takanobu Watanabe, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Yoshinori Kataoka, Kenji Natori, Keisaku Yamada, Hiroshi Iwai

Microelectron. Reliab., 2014

Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement.

Chunmeng Dou, Tomoya Shoji, Kazuhiro Nakajima, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai

Microelectron. Reliab., 2014

2013

Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT.

Takamasa Kawanago, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai

Proceedings of the European Solid-State Device Research Conference, 2013

1997

A 0.25-μm CMOS 0.9-V 100-MHz DSP core.

Masanori Izumikawa, Hiroyuki Igura, Hitoshi Wakabayashi, Ken Nakajima, Tohru Mogami, Tadahiko Horiuchi, Masakazu Yamashina

IEEE J. Solid State Circuits, 1997