Kazuo Tsutsui

According to our database, Kazuo Tsutsui authored at least 28 papers between 2005 and 2019.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2019

Switching of 3300V Scaled IGBT by 5V Gate Drive.

Toshiro Hiramoto, Katsumi Satoh, Tomoko Matsudai, Wataru Saito, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Shinichi Nishizawa, Ichiro Omura, Hiromichi Ohashi, Kazuo Itou, Toshihiro Takakura, Munetoshi Fukui, Shinichi Suzuki, Ken Takeuchi, Masanori Tsukuda, Yohichiroh Numasawa

Proceedings of the 13th IEEE International Conference on ASIC, 2019

2018

Effect of lanthanum silicate interface layer on the electrical characteristics of 4H-SiC metal-oxide-semiconductor capacitors.

Yiming Lei, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Masayuki Furuhashi, Shingo Tomohisa, Satoshi Yamakawa, Kuniyuki Kakushima

Microelectron. Reliab., 2018

Improvement of SiO₂/4H-SiC Interface properties by post-metallization annealing.

Yiming Lei, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Masayuki Furuhashi, Shingo Tomohisa, Satoshi Yamakawa, Kuniyuki Kakushima

Microelectron. Reliab., 2018

New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment.

Kuniyuki Kakushima, Takuya Hoshii, M. Watanabe, N. Shizyo, K. Furukawa, Takuya Saraya, T. Takakura, K. Itou, M. Fukui, S. Suzuki, Ken Takeuchi, Iriya Muneta, Hitoshi Wakabayashi, Y. Numasawa, Atsushi Ogura, Shinichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, H. Ohashi, Hiroshi Iwai

Proceedings of the 2018 IEEE Symposium on VLSI Circuits, 2018

Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately.

Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Masahiro Watanabe, Naoyuki Shigvo, Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Iriya Muneta, Hitoshi Wakabayashi, Shinichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Lwai

Proceedings of the 48th European Solid-State Device Research Conference, 2018

2017

Durability evaluation of hexagonal WO₃ electrode for lithium ion secondary batteries.

Akito Sasaki, Hideyuki Oozu, Miho Nakamura, Katsuaki Aoki, Yoshinori Kataoka, Syuichi Saito, Kumpei Kobayashi, Wei Li, Kuniyuki Kakushima, Kazuo Tsutsui, Hiroshi Iwai

Microelectron. Reliab., 2017

3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat).

Kazuo Tsutsui, Kuniyuki Kakushima, Takuya Hoshii, A. Nakajima, Shinichi Nishizawa, Hitoshi Wakabayashi, Iriya Muneta, K. Sato, Tomoko Matsudai, Wataru Saito, Takuya Saraya, K. Itou, M. Fukui, S. Suzuki, Masaharu Kobayashi, T. Takakura, Toshiro Hiramoto, Atsushi Ogura, Y. Numasawa, Ichiro Omura, H. Ohashi, Hiroshi Iwai

Proceedings of the 12th IEEE International Conference on ASIC, 2017

2016

Resistive switching properties of a thin SiO₂ layer with CeO_x buffer layer on n⁺ and p⁺ Si bottom electrodes.

M. S. Hadi, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Kuniyuki Kakushima

Microelectron. Reliab., 2016

Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current.

J. Chen, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Kuniyuki Kakushima

Microelectron. Reliab., 2016

La₂O₃ gate dielectrics for AlGaN/GaN HEMT.

J. Chen, Takamasa Kawanago, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, D. Nohata, Hiroshi Nohira, Kuniyuki Kakushima

Microelectron. Reliab., 2016

2015

Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity.

Wei Li, Akito Sasaki, Hideyuki Oozu, Katsuaki Aoki, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai

Microelectron. Reliab., 2015

Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes.

Wei Li, Akito Sasaki, Hideyuki Oozu, Katsuaki Aoki, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai

Microelectron. Reliab., 2015

2014

A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability.

Yan Wu, Hiroyuki Hasegawa, Kuniyuki Kakushima, Kenji Ohmori, Takanobu Watanabe, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Yoshinori Kataoka, Kenji Natori, Keisaku Yamada, Hiroshi Iwai

Microelectron. Reliab., 2014

Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement.

Chunmeng Dou, Tomoya Shoji, Kazuhiro Nakajima, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai

Microelectron. Reliab., 2014

2013

Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT.

Takamasa Kawanago, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai

Proceedings of the European Solid-State Device Research Conference, 2013

2012

Oxide and interface trap densities estimation in ultrathin W/La₂O₃/Si MOS capacitors.

M. Mamatrishat, T. Kubota, T. Seki, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai

Microelectron. Reliab., 2012

Resistive switching behavior of a CeO₂ based ReRAM cell incorporated with Si buffer layer.

Chunmeng Dou, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai

Microelectron. Reliab., 2012

(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture.

Takamasa Kawanago, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kazuo Tsutsui, Kenji Natori, Takeo Hattori, Hiroshi Iwai

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2011

Effects of La₂O₃ incorporation in HfO₂ gated nMOSFETs on low-frequency noise.

D. Zade, Soshi Sato, Kuniyuki Kakushima, A. Srivastava, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Chandan Kumar Sarkar, Hiroshi Iwai

Microelectron. Reliab., 2011

2010

Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness.

Yusuke Kobayashi, Kuniyuki Kakushima, Parhat Ahmet, V. Ramgopal Rao, Kazuo Tsutsui, Hiroshi Iwai

Microelectron. Reliab., 2010

Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La₂O₃ gate dielectrics.

Kuniyuki Kakushima, Kiichi Tachi, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai

Microelectron. Reliab., 2010

SrO capping effect for La₂O₃/Ce-silicate gate dielectrics.

Kuniyuki Kakushima, K. Okamoto, T. Koyanagi, M. Kouda, Kiichi Tachi, Takamasa Kawanago, J. Song, Parhat Ahmet, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai

Microelectron. Reliab., 2010

2008

Electrical characteristics of MOSFETs with La₂O₃/Y₂O₃ gate stack.

Parhat Ahmet, Kentaro Nakagawa, Kuniyuki Kakushima, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai

Microelectron. Reliab., 2008

2007

Parasitic Effects in Multi-Gate MOSFETs.

Yusuke Kobayashi, C. Raghunathan Manoj, Kazuo Tsutsui, Venkanarayan Hariharan, Kuniyuki Kakushima, V. Ramgopal Rao, Parhat Ahmet, Hiroshi Iwai

IEICE Trans. Electron., 2007

Carrier separation and Vth measurements of W-La₂O₃ gated MOSFET structures after electrical stress.

Joel Molina Reyes, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai

IEICE Electron. Express, 2007

2006

Effective mobility and interface-state density of La₂O₃ nMISFETs after post deposition annealing.

Jin-Aun Ng, Nobuyuki Sugii, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai

IEICE Electron. Express, 2006

2005

Electrical properties of vacuum annealed La₂O₃ thin films grown by E-beam evaporation.

Yongshik Kim, Kunihiro Miyauchi, Shun'ichiro Ohmi, Kazuo Tsutsui, Hiroshi Iwai

Microelectron. J., 2005

Combined Detection Method in a Sea Surveillance System.

Kazuya Takahashi, Yoshiki Kobayashi, Miyuki Fujii, Naoyuki Shimbo, Hirotada Ueda, Kazuo Tsutsui

IEICE Trans. Inf. Syst., 2005