Sina Arjmandpour
Orcid: 0000-0002-4587-425X
According to our database1,
Sina Arjmandpour authored at least 10 papers
between 2022 and 2026.
Collaborative distances:
Collaborative distances:
Timeline
Legend:
Book In proceedings Article PhD thesis Dataset OtherLinks
On csauthors.net:
Bibliography
2026
An R-RC Oscillator Achieving Second-Order Temperature Compensation and Oscillating Independently From the Comparator and Reset Delays.
IEEE J. Solid State Circuits, March, 2026
Proceedings of the IEEE Custom Integrated Circuits Conference, 2026
An 11bit, 140fs resolution, and 683fs INL Zero-Slope Digital-to-Time Converter for Fractional Frequency Syntheses.
Proceedings of the IEEE Custom Integrated Circuits Conference, 2026
2025
A 4.6-GHz 54.5-fs<sub>rms</sub> PLL-XO Co-Design Featuring a Pulse-Injection XO Driver.
IEEE J. Solid State Circuits, December, 2025
19.10 A 4.6GHz 63.3fs<sub>rms</sub> PLL-XO Co-Design Using a Self-Aligned Pulse-Injection Driver Achieving -255.2dB FoM<sub>J</sub> Including the XO Power and Noise.
Proceedings of the IEEE International Solid-State Circuits Conference, 2025
2024
An Impedance-Boosted Transformer-First Discrete-Time Analog Front-End Achieving 0.34 NEF and 389-MΩ Input Impedance.
IEEE J. Solid State Circuits, April, 2024
A 0.29pJ/Step Fully Discrete-Time Charge Domain Bridge-to-Digital Converter for Force Sensing in Spinal Implants Using RC Bridge.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024
2023
A 1, 024-Channel, 64-Interconnect, Capacitive Neural Interface Using a Cross-Coupled Microelectrode Array and 2-Dimensional Code-Division Multiplexing.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
An Energy-Efficient Impedance-Boosted Discrete-Time Amplifier Achieving 0.34 Noise Efficiency Factor and 389 MΩ Input Impedance.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
2022
A Second-Order Temperature-Compensated On-Chip R-RC Oscillator Achieving 7.93ppm/°C and 3.3pJ/Hz in -40°C to 125°C Temperature Range.
Proceedings of the IEEE International Solid-State Circuits Conference, 2022