Wang Liao
Orcid: 0000-0003-2134-5588Affiliations:
- Kochi University of Technology, Department of Engineering, Kami, Japan
- Osaka University, School of Systems Engineering, Japan (PhD 2019)
According to our database1,
Wang Liao
authored at least 13 papers
between 2017 and 2025.
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Bibliography
2025
Genshin: A Generalized Framework with Software-Hardware Co-design and Pruned Fault Injection for Reliability Analysis.
Proceedings of the IEEE International Test Conference, 2025
HachiFI: A Lightweight SoC Architecture-Independent Fault-Injection Framework for SEU Impact Evaluation.
Proceedings of the Design, Automation & Test in Europe Conference, 2025
2024
How accurately can soft error impact be estimated in black-box/white-box cases? - a case study with an edge AI SoC -.
Proceedings of the 61st ACM/IEEE Design Automation Conference, 2024
2023
Characterizing SEU Cross Sections of 12- and 28-nm SRAMs for 6.0, 8.0, and 14.8 MeV Neutrons.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
2021
Development of Autonomous Driving System based on Image Recognition using Programmable SoCs.
Proceedings of the International Conference on Field-Programmable Technology, 2021
2020
Characterizing Energetic Dependence of Low-Energy Neutron-induced MCUs in 65 nm bulk SRAMs.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
Impact of Hydrided and Non-Hydrided Materials Near Transistors on Neutron-Induced Single Event Upsets.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
When Single Event Upset Meets Deep Neural Networks: Observations, Explorations, and Remedies.
Proceedings of the 25th Asia and South Pacific Design Automation Conference, 2020
Proceedings of the 25th Asia and South Pacific Design Automation Conference, 2020
2019
Analyzing Impacts of SRAM, FF and Combinational Circuit on Chip-Level Neutron-Induced Soft Error Rate.
IEICE Trans. Electron., 2019
Negative and Positive Muon-Induced SEU Cross Sections in 28-nm and 65-nm Planar Bulk CMOS SRAMs.
Proceedings of the IEEE International Reliability Physics Symposium, 2019
Proceedings of the International Conference on Field-Programmable Technology, 2019
2017
Contributions of SRAM, FF and combinational circuit to chip-level neutron-induced soft error rate: - Bulk vs. FD-SOI at 0.5 and 1.0V -.
Proceedings of the 15th IEEE International New Circuits and Systems Conference, 2017