Winston Chern

According to our database, Winston Chern authored at least 3 papers between 2017 and 2025.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2025

Enhanced Memory Performance in Ferroelectric NAND Applications: The Role of Tunnel Dielectric Position for Robust 10-Year Retention.

Prasanna Venkatesan Ravindran, Andrea Padovani, Lance Fernandes, Priyankka Gundlapudi Ravikumar, Chinsung Park, Huy Tran, Zekai Wang, Hari Jayasankar, Amrit Garlapati, Taeyoung Song, Hang Chen, Winston Chern, Zheng Wang, Kijoon Kim, Jongho Woog, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Shimeng Yu, Suman Datta, Luca Larcher, Gaurav Thareja, Asif Khan

Proceedings of the IEEE International Reliability Physics Symposium, 2025

2022

Improved Endurance with Electron-Only Switching in Ferroelectric Devices.

Zheng Wang, Nujhat Tasneem, Hang Chen, Shimeng Yu, Winston Chern, Asif Islam Khan

Proceedings of the Device Research Conference, 2022

2017

Prospects of germanium-based MOSFETs and tunnel transistors for low power digital logic.

Winston Chern

PhD thesis, 2017