Andrea Padovani
Orcid: 0000-0003-1145-5257
According to our database1,
Andrea Padovani
authored at least 26 papers
between 2009 and 2023.
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Bibliography
2023
Insights into device and material origins and physical mechanisms behind cross temperature in 3D NAND.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
Proceedings of the IEEE International Reliability Physics Symposium, 2023
2022
Electron-assisted switching in FeFETs: Memory window dynamics - retention - trapping mechanisms and correlation.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Reliability of Non-Volatile Memory Devices for Neuromorphic Applications: A Modeling Perspective (Invited).
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Variability and disturb sources in ferroelectric 3D NANDs and comparison to Charge-Trap equivalents.
Proceedings of the IEEE International Memory Workshop, 2022
2021
Proceedings of the IEEE International Reliability Physics Symposium, 2021
2019
Role of Defects in the Reliability of HfO2/Si-Based Spacer Dielectric Stacks for Local Interconnects.
Proceedings of the IEEE International Reliability Physics Symposium, 2019
Understanding and Variability of Lateral Charge Migration in 3D CT-NAND Flash with and Without Band-Gap Engineered Barriers.
Proceedings of the IEEE International Reliability Physics Symposium, 2019
Spatio-Temporal Defect Generation Process in Irradiated HfO2 MOS Stacks: Correlated Versus Uncorrelated Mechanisms.
Proceedings of the IEEE International Reliability Physics Symposium, 2019
2018
Time-dependent dielectric breakdown statistics in SiO2 and HfO2 dielectrics: Insights from a multi-scale modeling approach.
Proceedings of the IEEE International Reliability Physics Symposium, 2018
Role of electron and hole trapping in the degradation and breakdown of SiO2 and HfO2 films.
Proceedings of the IEEE International Reliability Physics Symposium, 2018
2017
Correlated Effects on Forming and Retention of Al Doping in HfO<sub>2</sub>-Based RRAM.
IEEE Des. Test, 2017
Proceedings of the 17th Non-Volatile Memory Technology Symposium, 2017
2016
Bipolar Resistive RAM Based on HfO<sub>2</sub>: Physics, Compact Modeling, and Variability Control.
IEEE J. Emerg. Sel. Topics Circuits Syst., 2016
Multiscale modeling of electron-ion interactions for engineering novel electronic devices and materials.
Proceedings of the 26th International Workshop on Power and Timing Modeling, 2016
2015
Proceedings of the IEEE International Reliability Physics Symposium, 2015
Characterization of anomalous Random Telegraph Noise in Resistive Random Access Memory.
Proceedings of the 45th European Solid State Device Research Conference, 2015
2014
Proceedings of the 44th European Solid State Device Research Conference, 2014
2013
Compact modeling of TANOS program/erase operations for SPICE-like circuit simulations.
Microelectron. J., 2013
Proceedings of 2013 International Conference on IC Design & Technology, 2013
Random telegraph noise analysis to investigate the properties of active traps of HfO2-based RRAM in HRS.
Proceedings of the European Solid-State Device Research Conference, 2013
Proceedings of the European Solid-State Device Research Conference, 2013
2012
Proceedings of the 2012 European Solid-State Device Research Conference, 2012
2010
Microelectron. Reliab., 2010
Proceedings of the 17th IEEE International Conference on Electronics, 2010
2009