Xiaodi Jin

According to our database, Xiaodi Jin authored at least 5 papers between 2020 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

Characterization of Dynamic Large-Signal Operating Limits and Long-Term RF Reliability of SiGe HBTs.

Christoph Weimer, Xiaodi Jin, Gerhard G. Fischer, Michael Schröter

Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022

Thermal impedance of SiGe HBTs: Characterization and modeling.

Xiaodi Jin, Guangsheng Liang, Yves Zimmermann, Gerhard Fischer, Christoph Weimer, Mario Krattenmacher, Yaxin Zhang, Michael Schröter

Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022

2020

3.2-mW Ultra-Low-Power 173-207-GHz Amplifier With 130-nm SiGe HBTs Operating in Saturation.

Yaxin Zhang, Wenfeng Liang, Xiaodi Jin, Mario Krattenmacher, Sophia Falk, Paulius Sakalas, Bernd Heinemann, Michael Schröter

IEEE J. Solid State Circuits, 2020

Compact Modeling of SiGe HBTs for Design of Cryogenic Control and Readout Circuits for Quantum Computing.

Hanbin Ying, Sunil G. Rao, Jeffrey W. Teng, Milad Frounchi, Markus Müller, Xiaodi Jin, Michael Schröter, John D. Cressler

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2020

Modeling the temperature dependence of sheet and contact resistances in SiGe: C HBTs from 4.3 to 423 K.

Xiaodi Jin, Christoph Weimer, Yaxin Zhang, Michael Schröter

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2020