Alain Chantre

According to our database, Alain Chantre authored at least 8 papers between 2001 and 2013.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2013

A Study of SiGe HBT Signal Sources in the 220-330-GHz Range.

Sorin P. Voinigescu, Alexander Tomkins, Eric Dacquay, Pascal Chevalier, Jürgen Hasch, Alain Chantre, Bernard Sautreuil

IEEE J. Solid State Circuits, 2013

2009

0.13µm SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications.

Grégory Avenier, Malick Diop, Pascal Chevalier, Germaine Troillard, Nicolas Loubet, Julien Bouvier, Linda Depoyan, Nicolas Derrier, Michel Buczko, Cédric Leyris, Samuel Boret, Sébastien Montusclat, Alain Margain, Sébastien Pruvost, Sean T. Nicolson, Kenneth H. K. Yau, Nathalie Revil, Daniel Gloria, Didier Dutartre, Sorin P. Voinigescu, Alain Chantre

IEEE J. Solid State Circuits, 2009

Pushing the speed limits of SiGe: C HBTs up to 0.5 Terahertz.

Stefaan Decoutere, Stefaan Van Huylenbroeck, Bernd Heinemann, Alexander Fox, Pascal Chevalier, Alain Chantre, Thomas F. Meister, Klaus Aufinger, Michael Schröter

Proceedings of the IEEE Custom Integrated Circuits Conference, 2009

2008

165-GHz Transceiver in SiGe Technology.

Ekaterina Laskin, Pascal Chevalier, Alain Chantre, Bernard Sautreuil, Sorin P. Voinigescu

IEEE J. Solid State Circuits, 2008

Will BiCMOS stay competitive for mmW applications ?

Patrice Garcia, Alain Chantre, Sébastien Pruvost, Pascal Chevalier, Sean T. Nicolson, David Roy, Sorin P. Voinigescu, Christophe Garnier

Proceedings of the IEEE 2008 Custom Integrated Circuits Conference, 2008

2007

Design and Scaling of W-Band SiGe BiCMOS VCOs.

Sean T. Nicolson, Kenneth H. K. Yau, Pascal Chevalier, Alain Chantre, Bernard Sautreuil, Keith W. Tang, Sorin P. Voinigescu

IEEE J. Solid State Circuits, 2007

2005

230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications.

Pascal Chevalier, Cyril Fellous, Laurent Rubaldo, Franck Pourchon, Sébastien Pruvost, Rudy Beerkens, Fabienne Saguin, Nicolas Zerounian, Benoît Barbalat, Sylvie Lépilliet, Didier Dutartre, Didier Céli, Isabelle Telliez, Daniel Gloria, Frédéric Aniel, François Danneville, Alain Chantre

IEEE J. Solid State Circuits, 2005

2001

Investigation of deep traps in silicon-germanium epitaxial base bipolar transistors with a single polysilicon quasi self-aligned architecture.

Liviu Militaru, A. Souifi, M. Mouis, Alain Chantre, G. Brémond

Microelectron. Reliab., 2001