Antonio Stocco

According to our database, Antonio Stocco authored at least 8 papers between 2009 and 2015.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2015

Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs.

Davide Bisi, Antonio Stocco, Isabella Rossetto, Matteo Meneghini, Fabiana Rampazzo, Alessandro Chini, Fabio Soci, Alessio Pantellini, Claudio Lanzieri, Piero Gamarra, Cedric Lacam, M. Tordjman, Marie-Antoinette di Forte-Poisson, Davide De Salvador, Marco Bazzan, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2015

2014

Proton induced trapping effect on space compatible GaN HEMTs.

Antonio Stocco, Simone Gerardin, Davide Bisi, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni

Microelectron. Reliab., 2014

Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications.

Antonio Stocco, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni

Microelectron. Reliab., 2014

Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs.

Davide Bisi, Antonio Stocco, Matteo Meneghini, Fabiana Rampazzo, Andrea Cester, Gaudenzio Meneghesso, Enrico Zanoni

Proceedings of the 44th European Solid State Device Research Conference, 2014

2013

Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors.

Davide Bisi, Matteo Meneghini, Antonio Stocco, Giulia Cibin, Alessio Pantellini, Antonio Nanni, Claudio Lanzieri, Enrico Zanoni, Gaudenzio Meneghesso

Proceedings of the European Solid-State Device Research Conference, 2013

2012

Reliability and failure mechanisms of GaN HEMT devices suitable for high-frequency and high-power applications.

Antonio Stocco

PhD thesis, 2012

Single- and double-heterostructure GaN-HEMTs devices for power switching applications.

Alberto Zanandrea, Eldad Bahat-Treidel, Fabiana Rampazzo, Antonio Stocco, Matteo Meneghini, Enrico Zanoni, Oliver Hilt, Ponky Ivo, Joachim Würfl, Gaudenzio Meneghesso

Microelectron. Reliab., 2012

2009

Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test.

Nicolo Ronchi, Franco Zanon, Antonio Stocco, Augusto Tazzoli, Enrico Zanoni, Gaudenzio Meneghesso

Microelectron. Reliab., 2009