Atsushi Nozoe

According to our database, Atsushi Nozoe authored at least 3 papers between 1991 and 2001.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2001

A 126.6-mm² AND-type 512-Mb flash memory with 1.8-V power supply.

Tatsuya Ishii, Kazuyoshi Oshima, Hiroshi Sato, Satoshi Noda, Jiro Kishimoto, Hiroaki Kotani, Atsushi Nozoe, Kazunori Furusawa, Takayuki Yoshitake, Masataka Kato, Masahito Takahashi, Akihiko Sato, Shoji Kubono, Kiichi Manita, Kenji Koda, Takeshi Nakayama, Akira Hosogane

IEEE J. Solid State Circuits, 2001

1999

A 256-Mb multilevel flash memory with 2-MB/s program rate for mass storage applications.

Atsushi Nozoe, Hiroaki Kotani, Tetsuya Tsujikawa, Keiichi Yoshida, Kazunori Furusawa, Masataka Kato, Toshiaki Nishimoto, Hitoshi Kume, Hideaki Kurata, Naoki Miyamoto, Shoji Kubono, Michitaro Kanamitsu, Kenji Koda, Takeshi Nakayama, Yasuhiro Kouro, Akira Hosogane, Natsuo Ajika, Kiyoteru Kobayashi

IEEE J. Solid State Circuits, 1999

1991

Dual-regulator dual-decoding-trimmer DRAM voltage limiter for burn-in test.

Masashi Horiguchi, Masakazu Aoki, Jun Etoh, Gyoo Itoh, Kazuhiko Kajigaya, Atsushi Nozoe, Tetsuro Matsumoto

IEEE J. Solid State Circuits, November, 1991