Masataka Kato

According to our database, Masataka Kato authored at least 4 papers between 1995 and 2001.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2001

A 126.6-mm² AND-type 512-Mb flash memory with 1.8-V power supply.

Tatsuya Ishii, Kazuyoshi Oshima, Hiroshi Sato, Satoshi Noda, Jiro Kishimoto, Hiroaki Kotani, Atsushi Nozoe, Kazunori Furusawa, Takayuki Yoshitake, Masataka Kato, Masahito Takahashi, Akihiko Sato, Shoji Kubono, Kiichi Manita, Kenji Koda, Takeshi Nakayama, Akira Hosogane

IEEE J. Solid State Circuits, 2001

1999

A 256-Mb multilevel flash memory with 2-MB/s program rate for mass storage applications.

Atsushi Nozoe, Hiroaki Kotani, Tetsuya Tsujikawa, Keiichi Yoshida, Kazunori Furusawa, Masataka Kato, Toshiaki Nishimoto, Hitoshi Kume, Hideaki Kurata, Naoki Miyamoto, Shoji Kubono, Michitaro Kanamitsu, Kenji Koda, Takeshi Nakayama, Yasuhiro Kouro, Akira Hosogane, Natsuo Ajika, Kiyoteru Kobayashi

IEEE J. Solid State Circuits, 1999

1996

Bit-line clamped sensing multiplex and accurate high voltage generator for quarter-micron flash memories.

Takayuki Kawahara, Takashi Kobayashi, Yusuke Jyouno, Syun-ichi Saeki, Naoki Miyamoto, T. Adachi, Masataka Kato, Akihiko Sato, J. Yugami, Hitoshi Kume, Katsutaka Kimura

IEEE J. Solid State Circuits, 1996

1995

High reliability electron-ejection method for high density flash memories.

Takayuki Kawahara, Naoki Miyamoto, Syun-ichi Saeki, Yusuke Jyouno, Masataka Kato, Katsutaka Kimura

IEEE J. Solid State Circuits, December, 1995