Satoshi Noda

According to our database1, Satoshi Noda authored at least 11 papers between 2001 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

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Links

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Bibliography

2023
SONOS Embedded Flash IP Using Trap-Depth-Controlled SiN Film Enabling Data Retention more than 10 years at 200°C.
Proceedings of the IEEE International Memory Workshop, 2023

2015
Application of Tiled Display Environment for High Presence Informal Communication.
Proceedings of the 18th International Conference on Network-Based Information Systems, 2015

Proposal of the Fire Fighting Support System for the Volunteer Fire Company.
Proceedings of the 29th IEEE International Conference on Advanced Information Networking and Applications Workshops, 2015

Implementation of High Presence Video Communication System for Multiple Users Using Tiled Display Environment.
Proceedings of the 29th IEEE International Conference on Advanced Information Networking and Applications Workshops, 2015

2014
Experimental Evaluation on Transmission and Display of Ultra-Resolution Video on Tiled Display Wall in JGN-X Testbed.
Proceedings of the 17th International Conference on Network-Based Information Systems, 2014

2013
Tiled Display Environment to Realize GIS Based Disaster Information System.
Proceedings of the 16th International Conference on Network-Based Information Systems, 2013

An Experiment on Ultra-resolution Video Transmission with Tiled Display Wall in Wide-Area Network.
Proceedings of the 16th International Conference on Network-Based Information Systems, 2013

2007
Selective-Capacitance Constant-Charge-Injection Programming Scheme for High-Speed Multilevel AG-AND Flash Memories.
IEICE Trans. Electron., 2007

A 126 mm<sup>2</sup> 4-Gb Multilevel AG-AND Flash Memory with Inversion-Layer-Bit-Line Technology.
IEICE Trans. Electron., 2007

2004
A virtual prosthetic hand using EMG signals for fMRI measurements.
Proceedings of the 2004 IEEE/RSJ International Conference on Intelligent Robots and Systems, Sendai, Japan, September 28, 2004

2001
A 126.6-mm<sup>2</sup> AND-type 512-Mb flash memory with 1.8-V power supply.
IEEE J. Solid State Circuits, 2001


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