Bi Wang
Orcid: 0000-0002-3591-4764Affiliations:
- Beihang University, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Fert Beijing Institute, Beijing, China
According to our database1,
Bi Wang
authored at least 9 papers
between 2018 and 2025.
Collaborative distances:
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Bibliography
2025
A Novel Radiation-Hardened, Speed and Power Optimized Nonvolatile Latch for Aerospace Applications.
IEEE Trans. Circuits Syst. II Express Briefs, January, 2025
Thermal-Compensated MRAM Sensing: Dynamic TMR Stabilization Across Wide Temperature Range.
Proceedings of the 14th International Conference on Modern Circuits and Systems Technologies, 2025
Robust and Efficient NAND-Like TST-MRAM with Parallel Write/Read Operations and Reconfigurable PUF Mode.
Proceedings of the 26th International Symposium on Quality Electronic Design, 2025
A High-Gain Three-Stage Auto-Zeroing Residual Amplifier for High-Precision Pipelined SAR ADC.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2025
2023
A Reconfigurable and Machine Learning attack resistant strong PUF based on Arbiter Mechanism and SOT-MRAM.
Proceedings of the 18th ACM International Symposium on Nanoscale Architectures, 2023
2022
Proceedings of the 17th ACM International Symposium on Nanoscale Architectures, 2022
2021
Soft Error Sensitivity of Magnetic Random Access Memory and Its Radiation Hardening Design.
Proceedings of the 18th International SoC Design Conference, 2021
2019
Novel Radiation Hardening Read/Write Circuits Using Feedback Connections for Spin-Orbit Torque Magnetic Random Access Memory.
IEEE Trans. Circuits Syst. I Regul. Pap., 2019
2018
Proceedings of the IEEE International Symposium on Circuits and Systems, 2018