He Zhang

Orcid: 0000-0001-9262-3106

Affiliations:
  • Beihang University, Fert Beijing Insitute, MIIT Key Laboratory of Spintronics, Beijing, China (PhD 2021)


According to our database1, He Zhang authored at least 41 papers between 2016 and 2026.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

Legend:

Book  In proceedings  Article  PhD thesis  Dataset  Other 

Links

Online presence:

On csauthors.net:

Bibliography

2026
High-Efficiency and Low-Deviation Analog-Digital Hybrid Compute-in-Memory Architecture With Dynamic Weight Division.
IEEE Trans. Circuits Syst. I Regul. Pap., June, 2026

Self-Calibrating Analog Circuitry for Softmax-Scaled Function With Analog Computing-In-Memory.
IEEE Trans. Very Large Scale Integr. Syst., March, 2026

A 40 nm Buffer-Free 7T-SRAM Analog Charge-Domain CIM Macro With Merging Timing Based On Time-Row Division Strategy.
IEEE Trans. Very Large Scale Integr. Syst., March, 2026

High-performance true random number generator based on SOT-MTJ spin relaxation.
Sci. China Inf. Sci., 2026

A 4/8b High-Precision Fully-Parallel In-Sensor Computing Chip with Subthreshold Digital Pixel and Hybrid Pulse Modulation.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2026

Design and Implementation of a Scalable 64 p-bits Ising Computing Chip with Integrated SOT-MTJs for Efficient Computing.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2026

A 6.86Tb/s Bandwidth SOT-MRAM Sensing Scheme with Configurable Full-Column Over Frequency Technique for Near Memory Computing.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2026

An Effective SNN Macro with Real-Time STDP and Dynamic LIF Model Based on Thermally Interplayed Spin-Orbit Torque MTJ.
Proceedings of the Design, Automation & Test in Europe Conference, 2026

An Operator-Circuit Co-design Digital SOT-MRAM Computing-in-Memory Accelerator with Double Bit Density and Full-Utilized Bandwidth/Throughput.
Proceedings of the Design, Automation & Test in Europe Conference, 2026

2025
A 0.88 e‾<sub>rms</sub> 8-Mpixel 3D-Stacked Low Temporal-Noise CMOS Image Sensor With Auto-Zero Single-Slope ADC, Fast Correlated Multi-Sampling, Row-Wise Noise Reduction, and Dark Current Non-Uniformity Calibration Techniques.
IEEE Trans. Circuits Syst. I Regul. Pap., November, 2025

HiT-CIM: A High-Throughput Compute-in-Memory SRAM Architecture With Simultaneous Weight Loading/Computing and Balance Capabilities.
IEEE Trans. Emerg. Top. Comput., 2025

Model quantization for computing-in-memory: a survey.
Sci. China Inf. Sci., 2025

Thermal-Compensated MRAM Sensing: Dynamic TMR Stabilization Across Wide Temperature Range.
Proceedings of the 14th International Conference on Modern Circuits and Systems Technologies, 2025

An Adaptive Sparse Matrix Compression CIM Accelerator based on 256Kb SOT-MRAM for Downlink Massive MIMO Communications.
Proceedings of the IEEE/ACM International Conference On Computer Aided Design, 2025

A 24.65 TOPS/W@INT8 Hybrid Analog-Digital Multi-core SRAM CIM Macro with Optimal Weight Dividing and Resource Allocation Strategies.
Proceedings of the 30th Asia and South Pacific Design Automation Conference, 2025

2024
Erratum to "A Reconfigurable Spatial Architecture for Energy-Efficient Inception Neural Networks".
IEEE J. Emerg. Sel. Topics Circuits Syst., December, 2024

PipeCIM: A High-Throughput Computing-In-Memory Microprocessor With Nested Pipeline and RISC-V Extended Instructions.
IEEE Trans. Circuits Syst. I Regul. Pap., July, 2024

Toward Energy-efficient STT-MRAM-based Near Memory Computing Architecture for Embedded Systems.
ACM Trans. Embed. Comput. Syst., May, 2024

CiTST-AdderNets: Computing in Toggle Spin Torques MRAM for Energy-Efficient AdderNets.
IEEE Trans. Circuits Syst. I Regul. Pap., March, 2024

MixMixQ: Quantization with Mixed Bit-Sparsity and Mixed Bit-Width for CIM Accelerators.
Proceedings of the Great Lakes Symposium on VLSI 2024, 2024

Series-Parallel Hybrid SOT-MRAM Computing-in-Memory Macro with Multi-Method Modulation for High Area and Energy Efficiency.
Proceedings of the 61st ACM/IEEE Design Automation Conference, 2024

2023
A Reconfigurable Spatial Architecture for Energy-Efficient Inception Neural Networks.
IEEE J. Emerg. Sel. Topics Circuits Syst., March, 2023

An In-Memory-Computing STT-MRAM Macro with Analog ReLU and Pooling Layers for Ultra-High Efficient Neural Network.
Proceedings of the 12th Non-Volatile Memory Systems and Applications Symposium, 2023

A Robust Time-based Error-Proofing Readout Scheme for MRAM.
Proceedings of the 18th ACM International Symposium on Nanoscale Architectures, 2023

Toward Energy-Efficient Sparse Matrix-Vector Multiplication with near STT-MRAM Computing Architecture.
Proceedings of the 28th Asia and South Pacific Design Automation Conference, 2023

2022
SpinCIM: spin orbit torque memory for ternary neural networks based on the computing-in-memory architecture.
CCF Trans. High Perform. Comput., December, 2022

A Mini Tutorial of Processing in Memory: From Principles, Devices to Prototypes.
IEEE Trans. Circuits Syst. II Express Briefs, 2022

A Spintronic In-Memory Computing Network for Efficient Hamming Codec Implementation.
IEEE Trans. Circuits Syst. II Express Briefs, 2022

HD-CIM: Hybrid-Device Computing-In-Memory Structure Based on MRAM and SRAM to Reduce Weight Loading Energy of Neural Networks.
IEEE Trans. Circuits Syst. I Regul. Pap., 2022

CP-SRAM: charge-pulsation SRAM marco for ultra-high energy-efficiency computing-in-memory.
Proceedings of the DAC '22: 59th ACM/IEEE Design Automation Conference, San Francisco, California, USA, July 10, 2022

2021
A 40nm 33.6Tops/W 8T-SRAM Computing-in-Memory Macro with DAC-less Spike-Pulse-Truncation Input and ADC-less Charge-Reservoir-Integrate-Counter Output.
Proceedings of the 2021 IEEE International Conference on Integrated Circuits, 2021

SpinLiM: Spin Orbit Torque Memory for Ternary Neural Networks Based on the Logic-in-Memory Architecture.
Proceedings of the Design, Automation & Test in Europe Conference & Exhibition, 2021

2020
Deep Neural Network accelerator with Spintronic Memory.
Proceedings of the GLSVLSI '20: Great Lakes Symposium on VLSI 2020, 2020

High-Density, Low-Power Voltage-Control Spin Orbit Torque Memory with Synchronous Two-Step Write and Symmetric Read Techniques.
Proceedings of the 2020 Design, Automation & Test in Europe Conference & Exhibition, 2020

2019
Spintronic Memories: From Memory to Computing-in-Memory.
Proceedings of the IEEE/ACM International Symposium on Nanoscale Architectures, 2019

2018
A Full-Sensing-Margin Dual-Reference Sensing Scheme for Deeply-Scaled STT-RAM.
IEEE Access, 2018

A Novel Cross-point MRAM with Diode Selector Capable of High-Density, High-Speed, and Low-Power In-Memory Computation.
Proceedings of the 14th IEEE/ACM International Symposium on Nanoscale Architectures, 2018

High-Density and Fast-Configuration Non-Volatile Look-Up Table Based on NAND-Like Spintronic Memory.
Proceedings of the 2018 IEEE Asia Pacific Conference on Circuits and Systems, 2018

2017
Programmable Stateful In-Memory Computing Paradigm via a Single Resistive Device.
Proceedings of the 2017 IEEE International Conference on Computer Design, 2017

Advanced Low Power Spintronic Memories beyond STT-MRAM.
Proceedings of the on Great Lakes Symposium on VLSI 2017, 2017

2016
Dual reference sensing scheme with triple steady states for deeply scaled STT-MRAM.
Proceedings of the IEEE/ACM International Symposium on Nanoscale Architectures, 2016


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