Changsu Sim

According to our database, Changsu Sim authored at least 2 papers in 2022.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2022

SRAM Write- and Performance-Assist Cells for Reducing Interconnect Resistance Effects Increased With Technology Scaling.

Keonhee Cho, Heekyung Choi, In Jun Jung, Ji Sang Oh, Tae Woo Oh, Ki-Ryong Kim, Giseok Kim, Taemin Choi, Changsu Sim, Taejoong Song, Seong-Ook Jung

IEEE J. Solid State Circuits, 2022

A 14-nm Low Voltage SRAM with Charge-Recycling and Charge Self-Saving Techniques for Low-Power Applications.

Keonhee Cho, Giseok Kim, Ji Sang Oh, Ki-Ryong Kim, Changsu Sim, Younmee Bae, Mijung Kim, Sangyeop Baeck, Taejoong Song, Seong-Ook Jung

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022