Davide Favero

According to our database, Davide Favero authored at least 2 papers between 2022 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps.

Davide Favero, A. Cavaliere, Carlo De Santi, Matteo Borga, W. Gonçalez Filho, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs.

Davide Favero, Carlo De Santi, Kalparupa Mukherjee, Karen Geens, Matteo Borga, Benoit Bakeroot, Shuzhen You, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Proceedings of the IEEE International Reliability Physics Symposium, 2022