Piet Vanmeerbeek

According to our database, Piet Vanmeerbeek authored at least 7 papers between 2007 and 2015.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2015

Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors.

Matteo Meneghini, Riccardo Silvestri, Stefano Dalcanale, Davide Bisi, Enrico Zanoni, Gaudenzio Meneghesso, Piet Vanmeerbeek, Abhishek Banerjee, Peter Moens

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Trapping induced parasitic effects in GaN-HEMT for power switching applications.

Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni, Piet Vanmeerbeek, Peter Moens

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

Technology and design of GaN power devices.

Peter Moens, Abhishek Banerjee, P. Coppens, A. Constant, Piet Vanmeerbeek, Z. Li, F. Declercq, L. De Schepper, H. De Vleeschouwer, C. Liu, B. Padmanabhan, W. Jeon, J. Guo, A. Salih, Marnix Tack

Proceedings of the 45th European Solid State Device Research Conference, 2015

2012

Influence of charge balance on the robustness of trench-based super junction diodes.

Ana Villamor-Baliarda, Piet Vanmeerbeek, Michele Riccio, Vincenzo d'Alessandro, Andrea Irace, Jaume Roig, David Flores, Peter Moens

Microelectron. Reliab., 2012

2011

Electric field unbalance for robust floating ring termination.

Ana Villamor-Baliarda, Piet Vanmeerbeek, Jaume Roig, Peter Moens, David Flores

Microelectron. Reliab., 2011

2010

Next generation of Deep Trench Isolation for Smart Power technologies with 120 V high-voltage devices.

R. Charavel, Jaume Roig, S. Mouhoubi, P. Gassot, Filip Bauwens, Piet Vanmeerbeek, B. Desoete, Peter Moens, Eddy De Backer

Microelectron. Reliab., 2010

2007

Lifetime modeling of intrinsic gate oxide breakdown at high temperature.

R. Moonen, Piet Vanmeerbeek, G. Lekens, Ward De Ceuninck, Peter Moens, J. Boutsen

Microelectron. Reliab., 2007