Karen Geens

According to our database, Karen Geens authored at least 5 papers between 2019 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps.

Davide Favero, A. Cavaliere, Carlo De Santi, Matteo Borga, W. Gonçalez Filho, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs.

Davide Favero, Carlo De Santi, Kalparupa Mukherjee, Karen Geens, Matteo Borga, Benoit Bakeroot, Shuzhen You, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Device optimization for 200V GaN-on-SOI Platform for Monolithicly Integrated Power Circuits.

Olga Syshchyk, Thibault Cosnier, Zheng-Hong Huang, Deepthi Cingu, Dirk Wellekens, Anurag Vohra, Karen Geens, Pavan Vudumula, Urmimala Chatterjee, Stefaan Decoutere, Tian-Li Wu, Benoit Bakeroot

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

2020

Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors.

Kalparupa Mukherjee, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, Shuzhen You, Karen Geens, Matteo Borga, Benoit Bakeroot, Stefaan Decoutere

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process.

Yuki Yamashita, Steve Stoffels, Niels Posthuma, Karen Geens, Xiangdong Li, Jun Furuta, Stefaan Decoutere, Kazutoshi Kobayashi

IEICE Electron. Express, 2019