Gerald Rescher

According to our database, Gerald Rescher authored at least 5 papers between 2018 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs.

Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Thomas Aichinger, Paul Salmen, Gerald Rescher, Wolfgang Gustin, Tibor Grasser

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2021

A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation.

Paul Salmen, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Gerald Rescher, Thomas Aichinger

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

Influence of high-voltage gate-oxide pulses on the BTI behavior of SiC MOSFETs.

Sebastian Maaß, Hans Reisinger, Thomas Aichinger, Gerald Rescher

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Similarities and Differences of BTI in SiC and Si Power MOSFETs.

Judith Berens, Magdalena Weger, Gregor Pobegen, Thomas Aichinger, Gerald Rescher, Christian Schleich, Tibor Grasser

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2018

Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs.

Thomas Aichinger, Gerald Rescher, Gregor Pobegen

Microelectron. Reliab., 2018