Thomas Aichinger

According to our database, Thomas Aichinger authored at least 13 papers between 2008 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs.

Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Thomas Aichinger, Paul Salmen, Gerald Rescher, Wolfgang Gustin, Tibor Grasser

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs.

Maximilian W. Feil, Hans Reisinger, André Kabakow, Thomas Aichinger, Wolfgang Gustin, Tibor Grasser

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation.

Paul Salmen, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Gerald Rescher, Thomas Aichinger

Proceedings of the IEEE International Reliability Physics Symposium, 2021

A straightforward electrical method to determine screening capability of GOX extrinsics in arbitrary, commercially available SiC MOSFETs.

Judith Berens, Thomas Aichinger

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

Influence of high-voltage gate-oxide pulses on the BTI behavior of SiC MOSFETs.

Sebastian Maaß, Hans Reisinger, Thomas Aichinger, Gerald Rescher

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Similarities and Differences of BTI in SiC and Si Power MOSFETs.

Judith Berens, Magdalena Weger, Gregor Pobegen, Thomas Aichinger, Gerald Rescher, Christian Schleich, Tibor Grasser

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Gate-oxide reliability and failure-rate reduction of industrial SiC MOSFETs.

Thomas Aichinger, Matthias Schmidt

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2018

Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs.

Thomas Aichinger, Gerald Rescher, Gregor Pobegen

Microelectron. Reliab., 2018

Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs.

Katja Puschkarsky, Tibor Grasser, Thomas Aichinger, Wolfgang Gustin, Hans Reisinger

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2013

Refined NBTI characterization of arbitrarily stressed PMOS devices at ultra-low and unique temperatures.

Thomas Aichinger, Michael Nelhiebel, Tibor Grasser

Microelectron. Reliab., 2013

Case study on multiple fault dependability and security evaluations.

Johannes Grinschgl, Armin Krieg, Christian Steger, Reinhold Weiss, Holger Bock, Josef Haid, Thomas Aichinger, Christiane Ulbricht

Microprocess. Microsystems, 2013

2011

Impact of gate poly doping and oxide thickness on the N- and PBTI in MOSFETs.

Gregor Pobegen, Thomas Aichinger, Tibor Grasser, Michael Nelhiebel

Microelectron. Reliab., 2011

2008

On the temperature dependence of NBTI recovery.

Thomas Aichinger, Michael Nelhiebel, Tibor Grasser

Microelectron. Reliab., 2008