Hans Reisinger

According to our database1, Hans Reisinger authored at least 14 papers between 2009 and 2022.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Other 

Links

On csauthors.net:

Bibliography

2022
Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Efficient Evaluation of the Time-Dependent Threshold Voltage Distribution Due to NBTI Stress Using Transistor Arrays.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021
A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020
Influence of high-voltage gate-oxide pulses on the BTI behavior of SiC MOSFETs.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019
From Device Aging Physics to Automated Circuit Reliability Sign Off.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018
NBTI: Experimental investigation, physical modelling, circuit aging simulations and verification.
Microelectron. Reliab., 2018

Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

Fast acquisition of activation energy maps using temperature ramps for lifetime modeling of BTI.
Proceedings of the 48th European Solid-State Device Research Conference, 2018

2016
Degradation and recovery of variability due to BTI.
Microelectron. Reliab., 2016

2014
Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130 nm technology p-channel transistors.
Microelectron. Reliab., 2014

Characterization and modeling of charge trapping: From single defects to devices.
Proceedings of the 2014 IEEE International Conference on IC Design & Technology, 2014

2012
New insights on the PBTI phenomena in SiON pMOSFETs.
Microelectron. Reliab., 2012

2009
On the temperature and voltage dependence of short-term negative bias temperature stress.
Microelectron. Reliab., 2009


  Loading...