Wolfgang Gustin

According to our database1, Wolfgang Gustin authored at least 12 papers between 2005 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Links

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Bibliography

2023
Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022
Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

2018
NBTI: Experimental investigation, physical modelling, circuit aging simulations and verification.
Microelectron. Reliab., 2018

Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

Fast acquisition of activation energy maps using temperature ramps for lifetime modeling of BTI.
Proceedings of the 48th European Solid-State Device Research Conference, 2018

2016
Degradation and recovery of variability due to BTI.
Microelectron. Reliab., 2016

2014
Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130 nm technology p-channel transistors.
Microelectron. Reliab., 2014

HCS degradation of 5 nm oxide high-voltage PLDMOS.
Microelectron. Reliab., 2014

2012
New insights on the PBTI phenomena in SiON pMOSFETs.
Microelectron. Reliab., 2012

2008
New aspects for lifetime prediction of bipolar transistors in automotive power wafer technologies by using a power law fitting procedure.
Microelectron. Reliab., 2008

NBTI on smart power technologies: A detailed analysis of two concurrent effects using a re-examined on-the-fly technique.
Microelectron. Reliab., 2008

2005
Effects of inhomogeneous negative bias temperature stress on p-channel MOSFETs of analog and RF circuits.
Microelectron. Reliab., 2005


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