José Rebollo

According to our database, José Rebollo authored at least 17 papers between 2002 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Physics-Based Strategies for Fast TDDB Testing and Lifetime Estimation in SiC Power MOSFETs.

Oriol Avino-Salvado, Cyril Buttay, Ferran Bonet, Christophe Raynaud, Pascal Bevilacqua, José Rebollo, Hervé Morel, Xavier Perpiñà

IEEE Trans. Ind. Electron., May, 2024

2019

Solid-State Relay Solutions for Induction Cooking Applications Based on Advanced Power Semiconductor Devices.

Manuel Fernandez, Xavier Perpiñà, José Rebollo, Miquel Vellvehí, David Sanchez, Tomás Cabeza, Sergio Llorente, Xavier Jordà

IEEE Trans. Ind. Electron., 2019

2017

High-Voltage 4H-SiC Power MOSFETs With Boron-Doped Gate Oxide.

Victor Soler, Maria Cabello, Maxime Berthou, Josep Montserrat, José Rebollo, Philippe Godignon, Andrei Mihaila, Maria R. Rogina, Alberto Rodriguez, Javier Sebastián

IEEE Trans. Ind. Electron., 2017

2015

Experimental analysis of planar edge terminations for high voltage 4H-SiC devices.

Victor Soler, Maxime Berthou, Andrei Mihaila, Josep Montserrat, Philippe Godignon, José Rebollo, José Millán

Proceedings of the 45th European Solid State Device Research Conference, 2015

2012

Study of layout influence on ruggedness of NPT-IGBT devices by physical modelling.

Ignasi Cortés, Xavier Perpiñà, Jesús Urresti, Xavier Jordà, José Rebollo

Microelectron. Reliab., 2012

2011

Analysis of Clamped Inductive Turnoff Failure in Railway Traction IGBT Power Modules Under Overload Conditions.

Xavier Perpiñà, Jean-François Serviere, Jesús Urresti-Ibañez, Ignasi Cortés, Xavier Jordà, Salvador Hidalgo, José Rebollo, Michel Mermet-Guyennet

IEEE Trans. Ind. Electron., 2011

Long-Term Reliability of Railway Power Inverters Cooled by Heat-Pipe-Based Systems.

Xavier Perpiñà, Xavier Jordà, Miquel Vellvehí, José Rebollo, Michel Mermet-Guyennet

IEEE Trans. Ind. Electron., 2011

2008

IGBT module failure analysis in railway applications.

X. Perpiñà, Jean-François Serviere, Xavier Jordà, A. Fauquet, Salvador Hidalgo, Jesús Urresti-Ibañez, José Rebollo, Michel Mermet-Guyennet

Microelectron. Reliab., 2008

Analysis of punch-through breakdown in bulk silicon RF power LDMOS transistors.

Ignasi Cortés, Pablo Fernández-Martínez, David Flores, Salvador Hidalgo, José Rebollo

Microelectron. Reliab., 2008

Superjunction LDMOS on thick-SOI technology for RF applications.

Ignasi Cortés, Pablo Fernández-Martínez, David Flores, Salvador Hidalgo, José Rebollo

Microelectron. J., 2008

2007

Robustness test and failure analysis of IGBT modules during turn-off.

Jesús Urresti-Ibañez, Alberto Castellazzi, M. Piton, José Rebollo, Michel Mermet-Guyennet, Mauro Ciappa

Microelectron. Reliab., 2007

2005

Lateral punch-through TVS devices for on-chip protection in low-voltage applications.

Jesús Urresti, Salvador Hidalgo, David Flores, Jaume Roig, Ignasi Cortés, José Rebollo

Microelectron. Reliab., 2005

Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile.

Ignasi Cortés, Jaume Roig, David Flores, Jesús Urresti, Salvador Hidalgo, José Rebollo

Microelectron. Reliab., 2005

2004

Design considerations for 6.5 kV IGBT devices.

Miquel Vellvehí, David Flores, Xavier Jordà, Salvador Hidalgo, José Rebollo, L. Coulbeck, P. Waind

Microelectron. J., 2004

Thin-film silicon-on-sapphire LDMOS structures for RF power amplifier applications.

Jaume Roig, David Flores, Salvador Hidalgo, José Rebollo, José Millán

Microelectron. J., 2004

2003

Optimisation of very low voltage TVS protection devices.

Jesús Urresti, Salvador Hidalgo, David Flores, Jaume Roig, José Rebollo, I. Mazarredo

Microelectron. J., 2003

2002

Reduction of self-heating effect on SOIM devices.

Jaume Roig, David Flores, Miquel Vellvehí, José Rebollo, José Millán

Microelectron. Reliab., 2002