Kangjung Kim

According to our database, Kangjung Kim authored at least 2 papers between 2015 and 2018.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2018

Investigation of BTI characteristics and its behavior on 10 nm SRAM with high-k/metal gate FinFET technology having multi-V_T gate stack.

Minjung Jin, Kangjung Kim, Yoohwan Kim, Hyewon Shim, Jinju Kim, Gunrae Kim, Sangwoo Pae

Microelectron. Reliab., 2018

2015

SRAM stability design comprehending 14nm FinFET reliability.

Choelhwyi Bae, Sangwoo Pae, Cheong-sik Yu, Kangjung Kim, Yongshik Kim, Jongwoo Park

Proceedings of the IEEE International Reliability Physics Symposium, 2015