Jongwoo Park

According to our database, Jongwoo Park authored at least 10 papers between 2015 and 2019.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2019

Process Variation of Pixel Definition and Effects of Flexible OLED Luminance Degradation.

Jongwon Lee, Sangkil Kim, Yoonsuk Choi, Jongwoo Park

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Nonlinear Mixed Model and Reliability Prediction for OLED Luminance Degradation.

Kanghyun Choi, Jongwon Lee, Jongwoo Park

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Statistical modeling and reliability prediction for transient luminance degradation of flexible OLEDs.

Heejin Kim, Hayeon Shin, Jiyoung Park, Youngtae Choi, Jongwoo Park

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2015

Reliability of fine pitch COF: Influence of surface morphology and CuSn intermetallic compound formation.

Jongwoo Park, Miji Lee, Kyunghwan Min, J.-K. Choi, Changkyu Joo, S.-C. Park, Hanbyul Kang, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Effects of front-end-of line process variations and defects on retention failure of flash memory: Charge loss/gain mechanism.

Jongwoo Park, Miji Lee, Hanbyul Kang, Wooram Ko, Eunkyeong Choi, Junsik Im, Minwoo Lee, Dohwan Chung, Jinchul Park, Sangchul Shin, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Contact resistance of solder bump with low cost photosensitive polyimide for high performance SoC.

Jongwoo Park, Jungpyo Hong, Miji Lee, Dongyoon Sun, Kyung Kang, Taesung Kim, Seungwon Kim, Sujin Kwon, Changkyu Joo, Sangsu Ha, Wooyeon Kim, Jongsu Ryu, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Systematical study of 14nm FinFET reliability: From device level stress to product HTOL.

Changze Liu, Hyun-Chul Sagong, Hyejin Kim, Seungjin Choo, Hyunwoo Lee, Yoohwan Kim, Hyunjin Kim, Bisung Jo, Minjung Jin, Jinjoo Kim, Sangsu Ha, Sangwoo Pae, Jongwoo Park

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Radiation-induced soft error rate analyses for 14 nm FinFET SRAM devices.

Soonyoung Lee, Ilgon Kim, Sungmock Ha, Cheong-sik Yu, Jinhyun Noh, Sangwoo Pae, Jongwoo Park

Proceedings of the IEEE International Reliability Physics Symposium, 2015

CPI reliability and EMI benefit for MIM CAP embedded C4 package.

Hyunsuk Chun, In Hak Baick, Sangsu Ha, Eunmi Kwon, Seungbae Lee, Seil Kim, Sangwoo Pae, Jongwoo Park

Proceedings of the IEEE International Reliability Physics Symposium, 2015

SRAM stability design comprehending 14nm FinFET reliability.

Choelhwyi Bae, Sangwoo Pae, Cheong-sik Yu, Kangjung Kim, Yongshik Kim, Jongwoo Park

Proceedings of the IEEE International Reliability Physics Symposium, 2015