Hyewon Shim

According to our database, Hyewon Shim authored at least 10 papers between 2018 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Polarity Dependency of MOL-TDDB in FinFET.

Manisha Sharma, Hokyung Park, Yinghong Zhao, Ki-Don Lee, Liangshan Chen, Joonah Yoon, Rakesh Ranjan, Caleb Dongkyan Kwon, Hyewon Shim, Myungsoo Yeo, Shin-Young Chung, Jon Haefner

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Impact of Barrier Metal Thickness on SRAM Reliability.

Rakesh Ranjan, Pavitra Ramadevi Perepa, Ki-Don Lee, Hokyung Park, Peter Kim, Ganesh Chakravarthy Yerubandi, Jon Haefner, Caleb Dongkyun Kwon, Minjung Jin, Wenhao Zhou, Hyewon Shim, Shin-Young Chung

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Reliability Assessment of 3nm GAA Logic Technology Featuring Multi-Bridge-Channel FETs.

Seongkyung Kim, Hyerim Park, Eunyu Choi, Young Han Kim, Dahyub Kim, Hyewon Shim, Shin-Young Chung, Paul Jung

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Accelerator-Based Thermal-Neutron Beam by Compact and Low-Cost Moderator for Soft-Error Evaluation in Semiconductor Devices.

Taiki Uemura, Byungjin Chung, Jegon Kim, Hyewon Shim, Shin-Young Chung, Brandon Lee, Jaehee Choi, Shota Ohnishi, Ken Machida

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Thermal-Neutron SER Mitigation by Cobalt-Contact in 7 nm Bulk-FinFET Technology.

Taiki Uemura, Byungjin Chung, Jegon Kim, Hyewon Shim, Shin-Young Chung, Brandon Lee, Jaehee Choi, Shota Ohnishi, Ken Machida

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Time Dependent Variability in Advanced FinFET Technology for End-of-Lifetime Reliability Prediction.

Hai Jiang, Jinju Kim, Kihyun Choi, Hyewon Shim, Hyunchul Sagong, Junekyun Park, Hwasung Rhee, Euncheol Lee

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

Advanced Self-heating Model and Methodology for Layout Proximity Effect in FinFET Technology.

Hai Jiang, Hyun-Chul Sagong, Jinju Kim, Hyewon Shim, Yoohwan Kim, Junekyun Park, Taiki Uemura, Yongsung Ji, Taeyoung Jeong, Dongkyun Kwon, Hwasung Rhee, Sangwoo Pae, Brandon Lee

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Aging-Aware Design Verification Methods Under Real Product Operating Conditions.

Hyewon Shim, Jeongmin Jo, Yoohwan Kim, Bongyong Jeong, Minji Shon, Hai Jiang, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Investigation of BTI characteristics and its behavior on 10 nm SRAM with high-k/metal gate FinFET technology having multi-V_T gate stack.

Minjung Jin, Kangjung Kim, Yoohwan Kim, Hyewon Shim, Jinju Kim, Gunrae Kim, Sangwoo Pae

Microelectron. Reliab., 2018

Effects of Far-BEOL anneal on the WLR and product reliability characterization of FinFET process technology.

Hyun-Chul Sagong, Hyunjin Kim, Seungjin Choo, Sungyoung Yoon, Hyewon Shim, Sangsu Ha, Tae-Young Jeong, Minhyeok Choe, Junekyun Park, Sangchul Shin, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2018