Sangwoo Pae

According to our database, Sangwoo Pae authored at least 35 papers between 2006 and 2025.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2025

Novel Linear Model for OFF-State Stress Causing Stand-By Current of Advanced VNAND Chip.

Hyuk Park, Gang-Jun Kim, Nam-Jae Kim, Jaeyeop Ahn, Taehun You, Y. Kang, M. Yoon, Seonhaeng Lee, Nam-Hyun Lee, Sang Won Hwang, Yuchul Hwang, Seungbum Ko, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2025

Reliability Characterization Using Accelerated Methods of 1Tb 9th-Gen VNAND for TLC/QLC applications.

Gang-Jun Kim, Taehun You, Sewon Jeon, Seung Hwan Kwak, Hwangju Song, Shinhyung Kim, Nam-Jae Kim, Jaeyeop Ahn, Hyuk Park, Seonhaeng Lee, Nam-Hyun Lee, Young Hoon Cho, Sang Won Hwang, Yuchul Hwang, Seungbum Ko, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2025

2024

Comprehensive Study of SER in FDSOI-Planar: 28 nm to 18 nm Scaling Effect and Temperature Dependence.

Taiki Uemura, Byungjin Chung, Jaehee Choi, Seungbae Lee, Shin-Young Chung, Yuchul Hwang, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Soft-Error Sensitivity in SRAM Manufactured by Bulk Gate-All-Around (GAA) Technology.

Taiki Uemura, Byungjin Chung, Jaehee Choi, Seungbae Lee, Shin-Young Chung, Yuchul Hwang, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2024

V-Ramp VBD Prediction Method Using OCD-Spectrum and Deep-Learning, and Application to Early Detection of V-NAND Low Metal Reliability Risk.

SungMan Rhee, Sung-Pyo Park, Sangku Park, Yuchul Hwang, Sangwoo Pae, Jun Meng, Yoonju Park

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Effect of Off-State Stress on Data-Valid Window Margin for Advanced DRAM Using HK/MG Process Technology.

Sunhang Lee, Nam-Hyun Lee, Gang-Jun Kim, Jaeyeop Ahn, Ik-Hwan Kim, S. Ha, S. Rhee, GH Bae, KW Lee, YS Lee, Seungbum Ko, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Virtual FA Methodology for DRAM: Real-Time Analysis and Risk Assessment Method Using Telemetry.

Jungchul Lee, EC Kwon, SH Yoon, R. G. Oh, S. Y. Park, S. H. Youn, K. R. Choi, T. W. Kim, M. C. Kim, J. H. Park, Y. W. Ko, Y. D. Kim, J. S. Moon, H. A. Park, K. O. Hong, J. Y. Yang, J. Y. Yoon, J. M. Yoon, J. M. Lee, J. H. Kim, H. Y. Yoo, S. J. Kim, N.-H. Lee, S. H. Lee, K. S. Kwon, I. G. Jung, S. Y. Lee, H.-J. Kim, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

Customized wafer level verification methodology: quality risk pre-diagnosis with enhanced screen-ability of stand-by stress-related deteriorations.

Jiyoung Yoon, Bumgi Lee, Jaehee Song, Bokyoung Kang, Sangho Lee, Doh-Soon Kwak, Heonsang Lim, Ilsang Park, Jonghoon Kim, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Impact of Design and Process on Alpha-Induced SER in 4 nm Bulk-FinFET SRAM.

Taiki Uemura, Byungjin Chung, Shin-Young Chung, Seungbae Lee, Yuchul Hwang, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2021

Effect of High Temperature on Recovery of Hot Carrier Degradation of scaled nMOSFETs in DRAM.

Donghee Son, Gang-Jun Kim, Jongkyun Kim, Nam-Hyun Lee, Kijin Kim, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2021

The Characterization of Degradation on various SiON pMOSFET transistors under AC/DC NBTI stress.

Gang-Jun Kim, Moonjee Yoon, SungHwan Kim, Myeongkyu Eo, Shinhyung Kim, Taehun You, Namhyun Lee, Kijin Kim, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

Investigating of SER in 28 nm FDSOI-Planar and Comparing with SER in Bulk-FinFET.

Taiki Uemura, Byungjin Chung, Jeongmin Jo, Hai Jiang, Yongsung Ji, Tae-Young Jeong, Rakesh Ranjan, Youngin Park, Kiil Hong, Seungbae Lee, Hwasung Rhee, Sangwoo Pae, Euncheol Lee, Jaehee Choi, Shota Ohnishi, Ken Machida

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Backside Alpha-Irradiation Test in Flip-Chip Package in EUV 7 nm FinFET SRAM.

Taiki Uemura, Byungjin Chung, Jeongmin Jo, Hai Jiang, Yongsung Ji, Tae-Young Jeong, Rakesh Ranjan, Seungbae Lee, Hwasung Rhee, Sangwoo Pae, Euncheol Lee, Jaehee Choi, Shota Ohnishi, Ken Machida

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Early Diagnosis and Prediction of Wafer Quality Using Machine Learning on sub-10nm Logic Technology.

Heung-Kook Ko, Sena Park, Jihyun Ryu, Sung Ryul Kim, Giwon Lee, Dongjoon Lee, Sangwoo Pae, Euncheol Lee, Yongsun Ji, Hai Jiang, Taeyoung Jeong, Taiki Uemura, Dongkyun Kwon, Hyungrok Do, Hyungu Kahng, Yoon-Sang Cho, Jiyoon Lee, Seoung Bum Kim

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Advanced Self-heating Model and Methodology for Layout Proximity Effect in FinFET Technology.

Hai Jiang, Hyun-Chul Sagong, Jinju Kim, Hyewon Shim, Yoohwan Kim, Junekyun Park, Taiki Uemura, Yongsung Ji, Taeyoung Jeong, Dongkyun Kwon, Hwasung Rhee, Sangwoo Pae, Brandon Lee

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Reliability of Industrial grade Embedded-STT-MRAM.

Yongsung Ji, Hyunjae Goo, Jungman Lim, Tae-Young Jeong, Taiki Uemura, Gun Rae Kim, Boil Seo, Seungbae Lee, Goeun Park, Jeongmin Jo, Sang-Il Han, Kilho Lee, Junghyuk Lee, Sohee Hwang, Daesop Lee, Suksoo Pyo, Hyun Taek Jung, Shinhee Han, Seungmo Noh, Kiseok Suh, Sungyoung Yoon, Hyeonwoo Nam, Hyewon Hwang, Hai Jiang, J. W. Kim, D. Kwon, Yoonjong Song, K. H. Koh, Hwasung Rhee, Sangwoo Pae, E. Lee

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Reliability on EUV Interconnect Technology for 7nm and beyond.

Tae-Young Jeong, Miji Lee, Yunkyung Jo, Jinwoo Kim, Min Kim, Myungsoo Yeo, Jinseok Kim, Hyunjun Choi, Joosung Kim, Yoojin Jo, Yongsung Ji, Taiki Uemura, Hai Jiang, Dongkyun Kwon, HwaSung Rhee, Sangwoo Pae, Brandon Lee

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

SEIFF: Soft Error Immune Flip-Flop for Mitigating Single Event Upset and Single Event Transient in 10 nm FinFET.

Taiki Uemura, Soonyoung Lee, Dahye Min, Ihlhwa Moon, Seungbae Lee, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Aging-Aware Design Verification Methods Under Real Product Operating Conditions.

Hyewon Shim, Jeongmin Jo, Yoohwan Kim, Bongyong Jeong, Minji Shon, Hai Jiang, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Localized Layout Effect Related Reliability Approach in 8nm FinFETs Technology: From Transistor to Circuit.

Hai Jiang, Hyun-Chul Sagong, Jinju Kim, Junekyun Park, Sangchul Shin, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Reliability of 8Mbit Embedded-STT-MRAM in 28nm FDSOI Technology.

Y. Ji, H. J. Goo, J. Lim, S. B. Lee, S. Lee, Taiki Uemura, J. C. Park, S. I. Han, S. C. Shin, J. H. Lee, Y. J. Song, K. M. Lee, H. M. Shin, S. H. Hwang, B. Y. Seo, Y. K. Lee, J. C. Kim, Gwanhyeob Koh, K. C. Park, Sangwoo Pae, Gi-Tae Jeong, J. S. Yoon, E. S. Jung

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Investigation of BTI characteristics and its behavior on 10 nm SRAM with high-k/metal gate FinFET technology having multi-V_T gate stack.

Minjung Jin, Kangjung Kim, Yoohwan Kim, Hyewon Shim, Jinju Kim, Gunrae Kim, Sangwoo Pae

Microelectron. Reliab., 2018

Investigation of alpha-induced single event transient (SET) in 10 nm FinFET logic circuit.

Taiki Uemura, Soonyoung Lee, Dahye Min, Ihlhwa Moon, Jungman Lim, Seungbae Lee, Hyun-Chul Sagong, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Effects of Far-BEOL anneal on the WLR and product reliability characterization of FinFET process technology.

Hyun-Chul Sagong, Hyunjin Kim, Seungjin Choo, Sungyoung Yoon, Hyewon Shim, Sangsu Ha, Tae-Young Jeong, Minhyeok Choe, Junekyun Park, Sangchul Shin, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2018

A systematic study of gate dielectric TDDB in FinFET technology.

Hyunjin Kim, Minjung Jin, Hyun-Chul Sagong, Jinju Kim, Ukjin Jung, Minhyuck Choi, Junekyun Park, Sangchul Shin, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Reliability characterization of advanced CMOS image sensor (CIS) with 3D stack and in-pixel DTI.

Younggeun Ji, Jeonghoon Kim, Jungin Kim, Miji Lee, Jaeheon Noh, Taeyoung Jeong, Juhyeon Shin, Junho Kim, Young Heo, Ung Cho, Hyun-Chul Sagong, Junekyun Park, Yeonsik Choo, Gilhwan Do, Hoyoung Kang, Eunkyeong Choi, Dongyoon Sun, Changki Kang, Sangchul Shin, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Optimal design of dummy ball array in wafer level package to improve board level thermal cycle reliability (BLR).

Seongwon Jeong, Jinseok Kim, Ayoung Kim, Byungwook Kim, Moonsoo Lee, Jaewon Chang, In Hak Baick, Hanbyul Kang, Younggeun Ji, Sangchul Shin, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2015

Reliability of fine pitch COF: Influence of surface morphology and CuSn intermetallic compound formation.

Jongwoo Park, Miji Lee, Kyunghwan Min, J.-K. Choi, Changkyu Joo, S.-C. Park, Hanbyul Kang, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Effects of front-end-of line process variations and defects on retention failure of flash memory: Charge loss/gain mechanism.

Jongwoo Park, Miji Lee, Hanbyul Kang, Wooram Ko, Eunkyeong Choi, Junsik Im, Minwoo Lee, Dohwan Chung, Jinchul Park, Sangchul Shin, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Contact resistance of solder bump with low cost photosensitive polyimide for high performance SoC.

Jongwoo Park, Jungpyo Hong, Miji Lee, Dongyoon Sun, Kyung Kang, Taesung Kim, Seungwon Kim, Sujin Kwon, Changkyu Joo, Sangsu Ha, Wooyeon Kim, Jongsu Ryu, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Systematical study of 14nm FinFET reliability: From device level stress to product HTOL.

Changze Liu, Hyun-Chul Sagong, Hyejin Kim, Seungjin Choo, Hyunwoo Lee, Yoohwan Kim, Hyunjin Kim, Bisung Jo, Minjung Jin, Jinjoo Kim, Sangsu Ha, Sangwoo Pae, Jongwoo Park

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Radiation-induced soft error rate analyses for 14 nm FinFET SRAM devices.

Soonyoung Lee, Ilgon Kim, Sungmock Ha, Cheong-sik Yu, Jinhyun Noh, Sangwoo Pae, Jongwoo Park

Proceedings of the IEEE International Reliability Physics Symposium, 2015

CPI reliability and EMI benefit for MIM CAP embedded C4 package.

Hyunsuk Chun, In Hak Baick, Sangsu Ha, Eunmi Kwon, Seungbae Lee, Seil Kim, Sangwoo Pae, Jongwoo Park

Proceedings of the IEEE International Reliability Physics Symposium, 2015

SRAM stability design comprehending 14nm FinFET reliability.

Choelhwyi Bae, Sangwoo Pae, Cheong-sik Yu, Kangjung Kim, Yongshik Kim, Jongwoo Park

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2006

PMOS NBTI-induced circuit mismatch in advanced technologies.

Marty Agostinelli, Shing Lau, Sangwoo Pae, Phil Marzolf, Harish Muthali, Steve Jacobs

Microelectron. Reliab., 2006