Minjung Jin

According to our database, Minjung Jin authored at least 4 papers between 2015 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Impact of Barrier Metal Thickness on SRAM Reliability.

Rakesh Ranjan, Pavitra Ramadevi Perepa, Ki-Don Lee, Hokyung Park, Peter Kim, Ganesh Chakravarthy Yerubandi, Jon Haefner, Caleb Dongkyun Kwon, Minjung Jin, Wenhao Zhou, Hyewon Shim, Shin-Young Chung

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2018

Investigation of BTI characteristics and its behavior on 10 nm SRAM with high-k/metal gate FinFET technology having multi-V_T gate stack.

Minjung Jin, Kangjung Kim, Yoohwan Kim, Hyewon Shim, Jinju Kim, Gunrae Kim, Sangwoo Pae

Microelectron. Reliab., 2018

A systematic study of gate dielectric TDDB in FinFET technology.

Hyunjin Kim, Minjung Jin, Hyun-Chul Sagong, Jinju Kim, Ukjin Jung, Minhyuck Choi, Junekyun Park, Sangchul Shin, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2015

Systematical study of 14nm FinFET reliability: From device level stress to product HTOL.

Changze Liu, Hyun-Chul Sagong, Hyejin Kim, Seungjin Choo, Hyunwoo Lee, Yoohwan Kim, Hyunjin Kim, Bisung Jo, Minjung Jin, Jinjoo Kim, Sangsu Ha, Sangwoo Pae, Jongwoo Park

Proceedings of the IEEE International Reliability Physics Symposium, 2015