Gunrae Kim

According to our database, Gunrae Kim authored at least 4 papers between 2018 and 2021.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2021

Soft-Error Susceptibility in Flip-Flop in EUV 7 nm Bulk-FinFET Technology.

Taiki Uemura, Byungjin Chung, Jeongmin Jo, Mijoung Kim, Dalhee Lee, Gunrae Kim, Seungbae Lee, Taesjoong Song, Hwasung Rhee, Brandon Lee, Jaehee Choi

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Highly Reliable 28nm Embedded Flash Process Development for High-Density and High-Speed Automotive Grade-1 Application.

Jaehun Lee, Youngcheon Jeong, Kyongsik Yeom, Changmin Jeon, Jongsung Woo, Sangjin Lee, Ga-Young Lee, Dong-Hwee Hwang, Yong Seok Chung, Minji Seo, Dong-Hyun Kim, DalHwan Kim, Yongsik Kim, HyunChang Lee, Soomin Cho, MyeongHee Oh, Hyun-Jin Shin, Gun Rae Kim, Sungyoung Yoon, Yong Kyu Lee, Young Ki Hong

Proceedings of the IEEE International Memory Workshop, 2021

2020

Reliability of Industrial grade Embedded-STT-MRAM.

Yongsung Ji, Hyunjae Goo, Jungman Lim, Tae-Young Jeong, Taiki Uemura, Gun Rae Kim, Boil Seo, Seungbae Lee, Goeun Park, Jeongmin Jo, Sang-Il Han, Kilho Lee, Junghyuk Lee, Sohee Hwang, Daesop Lee, Suksoo Pyo, Hyun Taek Jung, Shinhee Han, Seungmo Noh, Kiseok Suh, Sungyoung Yoon, Hyeonwoo Nam, Hyewon Hwang, Hai Jiang, J. W. Kim, D. Kwon, Yoonjong Song, K. H. Koh, Hwasung Rhee, Sangwoo Pae, E. Lee

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2018

Investigation of BTI characteristics and its behavior on 10 nm SRAM with high-k/metal gate FinFET technology having multi-V_T gate stack.

Minjung Jin, Kangjung Kim, Yoohwan Kim, Hyewon Shim, Jinju Kim, Gunrae Kim, Sangwoo Pae

Microelectron. Reliab., 2018