Karol Kalna

According to our database, Karol Kalna authored at least 16 papers between 2001 and 2020.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2020

Benchmarking of FinFET, Nanosheet, and Nanowire FET Architectures for Future Technology Nodes.

Daniel Nagy, Gabriel Espineira, Guillermo Indalecio Fernández, Antonio J. García-Loureiro, Karol Kalna, Natalia Seoane

IEEE Access, 2020

2019

Drift-Diffusion Versus Monte Carlo Simulated ON-Current Variability in Nanowire FETs.

Daniel Nagy, Guillermo Indalecio Fernández, Antonio J. García-Loureiro, Gabriel Espineira, Muhammad A. Elmessary, Karol Kalna, Natalia Seoane

IEEE Access, 2019

2018

Optimisation of lateral super-junction multi-gate MOSFET for high drive current and low specific on-resistance in sub-100 V applications.

Olujide Adenekan, Paul Holland, Karol Kalna

Microelectron. J., 2018

Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs.

Steven J. Duffy, Brahim Benbakhti, Karol Kalna, Mohammed Boucherta, Wei Dong Zhang, Nour-Eddine Bourzgui, Ali Soltani

IEEE Access, 2018

2017

Operational frequency degradation induced trapping in scaled GaN HEMTs.

Brendan Ubochi, Soroush Faramehr, Khaled Ahmeda, Petar Igic, Karol Kalna

Microelectron. Reliab., 2017

Role of Self-Heating and Polarization in AlGaN/GaN-Based Heterostructures.

Khaled Ahmeda, Brendan Ubochi, Brahim Benbakhti, Steven J. Duffy, Ali Soltani, Wei Dong Zhang, Karol Kalna

IEEE Access, 2017

Study of strained effects in nanoscale GAA nanowire FETs using 3D Monte Carlo simulations.

Muhammad A. Elmessary, Daniel Nagy, Manuel Aldegunde, Antonio J. García-Loureiro, Karol Kalna

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2015

Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold.

Guillermo Indalecio Fernández, Natalia Seoane, Manuel Aldegunde, Karol Kalna, Antonio J. García-Loureiro

J. Low Power Electron., 2015

Energy conserving, self-force free Monte Carlo simulations of semiconductor devices on unstructured meshes.

Manuel Aldegunde, Karol Kalna

Comput. Phys. Commun., 2015

2011

Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors.

Antonio J. García-Loureiro, Natalia Seoane, Manuel Aldegunde, Raúl Valín Ferreiro, Asen Asenov, Antonio Martinez, Karol Kalna

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2011

2010

Impact of interface state trap density on the performance characteristics of different III-V MOSFET architectures.

Brahim Benbakhti, J. S. Ayubi-Moak, Karol Kalna, D. Lin, Geert Hellings, Guy Brammertz, Kristin De Meyer, Iain Thayne, Asen Asenov

Microelectron. Reliab., 2010

Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes.

Manuel Aldegunde, Natalia Seoane, Antonio J. García-Loureiro, Karol Kalna

Comput. Phys. Commun., 2010

2007

Development of a 3D Parallel Finite Element Monte Carlo Simulator for Nano-MOSFETs.

Manuel Aldegunde, Antonio J. García-Loureiro, Karol Kalna

Proceedings of the Large-Scale Scientific Computing, 6th International Conference, 2007

2005

A High-Performance Parallel Device Simulator for High Electron Mobility Transistors.

Natalia Seoane, Antonio J. García-Loureiro, Karol Kalna, Asen Asenov

Proceedings of the Parallel Computing: Current & Future Issues of High-End Computing, 2005

2003

Nonequilibrium and ballistic transport, and backscattering in decanano HEMTs: a Monte Carlo simulation study.

Karol Kalna, Asen Asenov

Math. Comput. Simul., 2003

2001

Scaling of pHEMTs to Decanano Dimensions.

Karol Kalna, Asen Asenov, K. Elgaid, Iain Thayne

VLSI Design, 2001