Helmut Jung

According to our database, Helmut Jung authored at least 5 papers between 2008 and 2017.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2017

High resolution physical analysis of ohmic contact formation at GaN-HEMT devices.

Andreas Graff, Michél Simon-Najasek, Frank Altmann, Ján Kuzmík, Dagmar Gregusová, S. Hascik, Helmut Jung, T. Baur, Jan Grünenpütt, Hervé Blanck

Microelectron. Reliab., 2017

2016

Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures.

Mikael Broas, Andreas Graff, Michél Simon-Najasek, David Poppitz, Frank Altmann, Helmut Jung, Hervé Blanck

Microelectron. Reliab., 2016

2015

Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence.

Tommaso Brazzini, Michael A. Casbon, Huarui Sun, Michael J. Uren, Jonathan Lees, Paul J. Tasker, Helmut Jung, Hervé Blanck, Martin Kuball

Microelectron. Reliab., 2015

2012

Reliability data's of 0.5 μm AlGaN/GaN on SiC technology qualification.

Benoit Lambert, Jim Thorpe, Reza Behtash, Bernd Schauwecker, Franck Bourgeois, Helmut Jung, Joëlle Bataille, Patrick Mezenge, Cyril Gourdon, Catherine Ollivier, Didier Floriot, Hervé Blanck

Microelectron. Reliab., 2012

2008

GaAs Industry in Europe - Technologies, Trends and New Developments.

Helmut Jung, Hervé Blanck, Wolfgang Bösch, Jim Mayock

IEICE Trans. Electron., 2008