Maxime Berthou

According to our database, Maxime Berthou authored at least 4 papers between 2009 and 2017.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2017

High-Voltage 4H-SiC Power MOSFETs With Boron-Doped Gate Oxide.

Victor Soler, Maria Cabello, Maxime Berthou, Josep Montserrat, José Rebollo, Philippe Godignon, Andrei Mihaila, Maria R. Rogina, Alberto Rodriguez, Javier Sebastián

IEEE Trans. Ind. Electron., 2017

2015

Experimental analysis of planar edge terminations for high voltage 4H-SiC devices.

Victor Soler, Maxime Berthou, Andrei Mihaila, Josep Montserrat, Philippe Godignon, José Rebollo, José Millán

Proceedings of the 45th European Solid State Device Research Conference, 2015

2014

Temperature effects on the ruggedness of SiC Schottky diodes under surge current.

Javier Leon, Xavier Perpiñà, Viorel Banu, Josep Montserrat, Maxime Berthou, Miquel Vellvehí, Philippe Godignon, Xavier Jordà

Microelectron. Reliab., 2014

2009

Microstructure evolution observation for SAC solder joint: Comparison between thermal cycling and thermal storage.

Maxime Berthou, P. Retailleau, Hélène Frémont, Alexandrine Guédon-Gracia, C. Jéphos-Davennel

Microelectron. Reliab., 2009