Muhammed Ahosan Ul Karim

According to our database, Muhammed Ahosan Ul Karim authored at least 3 papers between 2018 and 2020.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2020

Bias-Dependent Variation in FinFET SRAM.

Randy W. Mann, Meixiong Zhao, Oh Sung Kwon, Xi Cao, Sanjay Parihar, Muhammed Ahosan Ul Karim, Jack M. Higman, Joseph Versaggi, Rick Carter

IEEE Trans. Very Large Scale Integr. Syst., 2020

An Energy-Efficient and High Throughput in-Memory Computing Bit-Cell With Excellent Robustness Under Process Variations for Binary Neural Network.

Gobinda Saha, Zhewei Jiang, Sanjay Parihar, Xi Cao, Jack M. Higman, Muhammed Ahosan Ul Karim

IEEE Access, 2020

2018

10T Differential-Signal SRAM Design in a L4-NM FinFET Technology for High-Speed Application.

Motoi Ichihashi, Youngtag Woo, Muhammed Ahosan Ul Karim, Vivek Joshi, David Burnett

Proceedings of the 31st IEEE International System-on-Chip Conference, 2018