Rick Carter

According to our database, Rick Carter authored at least 5 papers between 2016 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2022

A Physics based MTJ Compact Model for State-of-the-Art and Emerging STT-MRAM Failure Analysis and Yield Enhancement.

Nishtha S. Gaul, Akhilesh Jaiswal, Hongsik Yoon, Taeyoung Lee, Kazutaka Yamane, Joseph Versaggi, Rick Carter, Bipul C. Paul

Proceedings of the IEEE International Memory Workshop, 2022

2020

Bias-Dependent Variation in FinFET SRAM.

Randy W. Mann, Meixiong Zhao, Oh Sung Kwon, Xi Cao, Sanjay Parihar, Muhammed Ahosan Ul Karim, Jack M. Higman, Joseph Versaggi, Rick Carter

IEEE Trans. Very Large Scale Integr. Syst., 2020

2019

An Extrinsic Device and Leakage Mechanism in Advanced Bulk FinFET SRAM.

Randy W. Mann, Meixiong Zhao, Sanjay Parihar, Qun Gao, Ankur Arya, Carl Radens, Shesh Mani Pandey, Joseph Versaggi, Jack M. Higman, Rick Carter

IEEE Trans. Very Large Scale Integr. Syst., 2019

2017

Characterization of atomic layer deposited low-k spacer for FDSOI high-k metal gate transistor.

D. H. Triyoso, G. R. Mulfinger, K. Hempel, H. Tao, F. Koehler, L. Kang, A. Kumar, T. McArdle, J. Holt, A. L. Child, S. Straub, F. Ludwig, Z. Chen, J. Kluth, Rick Carter

Proceedings of the 2017 IEEE International Conference on IC Design and Technology, 2017

2016

Extending HKMG scaling on CMOS with FDSOI: Advantages and integration challenges.

D. H. Triyoso, Rick Carter, J. Kluth, K. Hempel, M. Gribelyuk, L. Kang, A. Kumar, B. Mulfinger, P. Javorka, K. Punchihewa, A. Child, T. McArdle, J. Holt, S. Straub, R. Sporer, P. Chen

Proceedings of the International Conference on IC Design and Technology, 2016