Nianduan Lu

According to our database, Nianduan Lu authored at least 2 papers between 2022 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Recent progress in InGaZnO FETs for high-density 2T0C DRAM applications.

Shengzhe Yan, Zhaori Cong, Nianduan Lu, Jinshan Yue, Qing Luo

Sci. China Inf. Sci., October, 2023

2022

Scaling Dual-Gate Ultra-thin a-IGZO FET to 30 nm Channel Length with Record-high Gm, max of 559 µS/µm at VDS=1 V, Record-low DIBL of 10 mV/V and Nearly Ideal SS of 63 mV/dec.

Kaifei Chen, Jiebin Niu, Guanhua Yang, Menggan Liu, Wendong Lu, Fuxi Liao, Kailiang Huang, XinLv Duan, Congyan Lu, Jiawei Wang, Lingfei Wang, Mengmeng Li, Di Geng, Chao Zhao, Guilei Wang, Nianduan Lu, Ling Li, Ming Liu

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022