Zhi Li

Orcid: 0009-0000-9649-7338

Affiliations:
  • Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China


According to our database1, Zhi Li authored at least 13 papers between 2023 and 2026.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

Legend:

Book  In proceedings  Article  PhD thesis  Dataset  Other 

Links

Online presence:

On csauthors.net:

Bibliography

2026
A hybrid-tiling attention accelerator with a fully-pipelined balanced systolic array in 3D hybrid-bonding near-DRAM integration.
Microelectron. J., 2026

A 12nm 4Mb 104.56-to-137.75TFLOPS/W Charge-Trap Transistor-Based Computing-in-Memory Macro Using Analog-Predict-Digital-Compute for AI Edge Devices.
Proceedings of the IEEE International Solid-State Circuits Conference, 2026

30.6 A 16Mb 166.8TOPS/W Near-Memory Phase-Domain-Computing Ferroelectric NAND Flash for Approximate Nearest Neighbor Search on Edge Devices.
Proceedings of the IEEE International Solid-State Circuits Conference, 2026

A BEOL Ferroelectric FET-based Computing Unit for Digital Computing-in-Memory.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2026

2025
A High-Density Energy-Efficient CNM Macro Using Hybrid RRAM and SRAM for Memory-Bound Applications.
IEEE Trans. Very Large Scale Integr. Syst., August, 2025

An RRAM Digital Computing-in-Memory Macro With Dual-Mode Multiplication and Maximum Value Rounding Adder Tree.
IEEE Trans. Very Large Scale Integr. Syst., June, 2025

SHMT: An SRAM and HBM Hybrid Computing-in-Memory Architecture With Optimized KV Cache for Multimodal Transformer.
IEEE Trans. Circuits Syst. I Regul. Pap., June, 2025

An energy-efficient FeFET-based computing-in-memory macro using BEOL-integrated HZO ferroelectric capacitors.
Sci. China Inf. Sci., 2025

2024
Write-Verify-Free MLC RRAM Using Nonbinary Encoding for AI Weight Storage at the Edge.
IEEE Trans. Very Large Scale Integr. Syst., February, 2024

First Demonstration of Monolithic Three-Dimensional Integration of Ultra-High Density Hybrid IGZO/Si SRAM and IGZO 2T0C DRAM Achieving Record-Low Latency (5000s).
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

34.9 A Flash-SRAM-ADC-Fused Plastic Computing-in-Memory Macro for Learning in Neural Networks in a Standard 14nm FinFET Process.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024

A 2T P-Channel Logic Flash Cell for Reconfigurable Interconnection in Chiplet-Based Computing-In-Memory Accelerators.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2024

2023
A 28-nm RRAM Computing-in-Memory Macro Using Weighted Hybrid 2T1R Cell Array and Reference Subtracting Sense Amplifier for AI Edge Inference.
IEEE J. Solid State Circuits, October, 2023


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