Paul-Sen Kan

According to our database1, Paul-Sen Kan authored at least 5 papers between 2013 and 2015.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Other 

Links

On csauthors.net:

Bibliography

2015
A 0.325 V, 600-kHz, 40-nm 72-kb 9T Subthreshold SRAM with Aligned Boosted Write Wordline and Negative Write Bitline Write-Assist.
IEEE Trans. Very Large Scale Integr. Syst., 2015

2014
A 40 nm 512 kb Cross-Point 8 T Pipeline SRAM With Binary Word-Line Boosting Control, Ripple Bit-Line and Adaptive Data-Aware Write-Assist.
IEEE Trans. Circuits Syst. I Regul. Pap., 2014

A 40nm 256kb 6T SRAM with threshold power-gating, low-swing global read bit-line, and charge-sharing write with Vtrip-tracking and negative source-line write-assists.
Proceedings of the 27th IEEE International System-on-Chip Conference, 2014

2013
A 40nm 1.0Mb 6T pipeline SRAM with digital-based Bit-Line Under-Drive, Three-Step-Up Word-Line, Adaptive Data-Aware Write-Assist with VCS tracking and Adaptive Voltage Detector for boosting control.
Proceedings of the 2013 IEEE International SOC Conference, Erlangen, Germany, 2013

A 40nm 1.0Mb pipeline 6T SRAM with variation-tolerant Step-Up Word-Line and Adaptive Data-Aware Write-Assist.
Proceedings of the 2013 IEEE International Symposium on Circuits and Systems (ISCAS2013), 2013


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