Kuen-Di Lee

According to our database1, Kuen-Di Lee authored at least 14 papers between 2011 and 2017.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Links

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Bibliography

2017
A 0.5-V 28-nm 256-kb Mini-Array Based 6T SRAM With Vtrip-Tracking Write-Assist.
IEEE Trans. Circuits Syst. I Regul. Pap., 2017

2016
A 0.35 V, 375 kHz, 5.43 µW, 40 nm, 128 kb, symmetrical 10T subthreshold SRAM with tri-state bit-line.
Microelectron. J., 2016

2015
A 0.325 V, 600-kHz, 40-nm 72-kb 9T Subthreshold SRAM with Aligned Boosted Write Wordline and Negative Write Bitline Write-Assist.
IEEE Trans. Very Large Scale Integr. Syst., 2015

2014
A 40nm 256kb 6T SRAM with threshold power-gating, low-swing global read bit-line, and charge-sharing write with Vtrip-tracking and negative source-line write-assists.
Proceedings of the 27th IEEE International System-on-Chip Conference, 2014

2013
A 40nm 1.0Mb pipeline 6T SRAM with variation-tolerant Step-Up Word-Line and Adaptive Data-Aware Write-Assist.
Proceedings of the 2013 IEEE International Symposium on Circuits and Systems (ISCAS2013), 2013

2012
A 0.33-V, 500-kHz, 3.94-µW 40-nm 72-Kb 9T Subthreshold SRAM With Ripple Bit-Line Structure and Negative Bit-Line Write-Assist.
IEEE Trans. Circuits Syst. II Express Briefs, 2012

A Single-Ended Disturb-Free 9T Subthreshold SRAM With Cross-Point Data-Aware Write Word-Line Structure, Negative Bit-Line, and Adaptive Read Operation Timing Tracing.
IEEE J. Solid State Circuits, 2012

Embedded SRAM ring oscillator for in-situ measurement of NBTI and PBTI degradation in CMOS 6T SRAM array.
Proceedings of Technical Program of 2012 VLSI Design, Automation and Test, 2012

An all-digital Read Stability and Write Margin characterization scheme for CMOS 6T SRAM array.
Proceedings of Technical Program of 2012 VLSI Design, Automation and Test, 2012

A 55nm 0.5V 128Kb cross-point 8T SRAM with data-aware dynamic supply Write-assist.
Proceedings of the IEEE 25th International SOC Conference, 2012

High-performance 0.6V VMIN 55nm 1.0Mb 6T SRAM with adaptive BL bleeder.
Proceedings of the 2012 IEEE International Symposium on Circuits and Systems, 2012

An all-digital bit transistor characterization scheme for CMOS 6T SRAM array.
Proceedings of the 2012 IEEE International Symposium on Circuits and Systems, 2012

Design and implementation of dynamic Word-Line pulse write margin monitor for SRAM.
Proceedings of the IEEE Asia Pacific Conference on Circuits and Systems, 2012

2011
A high-performance low VMIN 55nm 512Kb disturb-free 8T SRAM with adaptive VVSS control.
Proceedings of the IEEE 24th International SoC Conference, SOCC 2011, Taipei, Taiwan, 2011


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