Wei-Chiang Shih

According to our database1, Wei-Chiang Shih authored at least 11 papers between 2011 and 2021.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

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In proceedings 
Article 
PhD thesis 
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Links

On csauthors.net:

Bibliography

2021
A Local Computing Cell and 6T SRAM-Based Computing-in-Memory Macro With 8-b MAC Operation for Edge AI Chips.
IEEE J. Solid State Circuits, 2021

2020
15.5 A 28nm 64Kb 6T SRAM Computing-in-Memory Macro with 8b MAC Operation for AI Edge Chips.
Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020

2013
A 40nm 1.0Mb pipeline 6T SRAM with variation-tolerant Step-Up Word-Line and Adaptive Data-Aware Write-Assist.
Proceedings of the 2013 IEEE International Symposium on Circuits and Systems (ISCAS2013), 2013

2012
A Single-Ended Disturb-Free 9T Subthreshold SRAM With Cross-Point Data-Aware Write Word-Line Structure, Negative Bit-Line, and Adaptive Read Operation Timing Tracing.
IEEE J. Solid State Circuits, 2012

Embedded SRAM ring oscillator for in-situ measurement of NBTI and PBTI degradation in CMOS 6T SRAM array.
Proceedings of Technical Program of 2012 VLSI Design, Automation and Test, 2012

An all-digital Read Stability and Write Margin characterization scheme for CMOS 6T SRAM array.
Proceedings of Technical Program of 2012 VLSI Design, Automation and Test, 2012

A 55nm 0.5V 128Kb cross-point 8T SRAM with data-aware dynamic supply Write-assist.
Proceedings of the IEEE 25th International SOC Conference, 2012

High-performance 0.6V VMIN 55nm 1.0Mb 6T SRAM with adaptive BL bleeder.
Proceedings of the 2012 IEEE International Symposium on Circuits and Systems, 2012

An all-digital bit transistor characterization scheme for CMOS 6T SRAM array.
Proceedings of the 2012 IEEE International Symposium on Circuits and Systems, 2012

Design and implementation of dynamic Word-Line pulse write margin monitor for SRAM.
Proceedings of the IEEE Asia Pacific Conference on Circuits and Systems, 2012

2011
A high-performance low VMIN 55nm 512Kb disturb-free 8T SRAM with adaptive VVSS control.
Proceedings of the IEEE 24th International SoC Conference, SOCC 2011, Taipei, Taiwan, 2011


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