Reika Ichihara

According to our database, Reika Ichihara authored at least 7 papers between 2018 and 2026.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2026

Circular SSDs Enabled by Recoverable 3-D Flash Memory.

Hajime Sano, Hitomi Tanaka, Reika Ichihara, Yuta Aiba, Kazuma Hasegawa, Chieko Tokunaga, Tatsuya Watanabe, Yasuhito Yoshimizu, Tomoya Sanuki

IEEE Des. Test, February, 2026

2025

Cycling Induced Imprint Phenomenon at Intermediate State used for Multi-Level Operation in HfO2-FeFET.

Viktoria Schlykow, Kunifumi Suzuki, Yoko Yoshimura, Hidesato Ishida, Kiwamu Sakuma, Kazuhiro Matsuo, Masumi Saitoh, Reika Ichihara

Proceedings of the IEEE International Reliability Physics Symposium, 2025

2024

Overcome the End of Life of 3D Flash Memory by Recovery Annealing, Aiming for Carbon Neutrality in Semiconductor Manufacturing.

Hitomi Tanaka, Hajime Sano, Reika Ichihara, Yuta Aiba, Kazuma Hasegawa, Kana Kudo, Chieko Tokunaga, Yasuhito Yoshimizu, Fumie Kikushima, Tomoya Sanuki

Proceedings of the IEEE International Memory Workshop, 2024

2023

Comprehensive Analysis of Hole-Trapping in SiN Films with a Wide Range of Time Constants Based on Dynamic C-V.

Harumi Seki, Reika Ichihara, Yusuke Higashi, Yasushi Nakasaki, Masumi Saitoh, Masamichi Suzuki

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Novel Operation Scheme for Suppressing Disturb in HfO2-based FeFET Considering Charge- Trapping-Coupled Polarization Dynamics.

Takamasa Hamai, Kunifumi Suzuki, Reika Ichihara, Yusuke Higashi, Yoko Yoshimura, Kiwamu Sakuma, Kensuke Ota, Kota Takahashi, Kazuhiro Matsuo, Shosuke Fujii, Masumi Saitoh

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2019

Ag Ionic Memory Cell Technology for Terabit-Scale High-DensityApplication.

Shosuke Fujii, Reika Ichihara, Takuya Konno, Marina Yamaguchi, Harumi Seki, Hiroki Tanaka, Dandan Zhao, Yoko Yoshimura, Masumi Saitoh, Masato Koyama

Proceedings of the 2019 Symposium on VLSI Circuits, Kyoto, Japan, June 9-14, 2019, 2019

2018

Impact of specific failure mechanisms on endurance improvement for HfO2-based ferroelectric tunnel junction memory.

Marina Yamaguchi, Shosuke Fujii, Yuuichi Kamimuta, Shoichi Kabuyanagi, Tsunehiro Ino, Yasushi Nakasaki, Riichiro Takaishi, Reika Ichihara, Masumi Saitoh

Proceedings of the IEEE International Reliability Physics Symposium, 2018